DSS10-01AS-TUB

DSS10-01AS Schottky Diode VRRM = 100 V I FAV = 10 A VF = 0.66 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS10-01AS Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20211013a DSS10-01AS Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 100 IR reverse current, drain current VR = 100 V TVJ = 25°C 300 µA VR = 100 V TVJ = 125°C 2.5 mA IF = 10 A TVJ = 25°C 0.84 V IF = 20 A 0.97 V IF = 10 A 0.66 V IF = 20 A VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. TVJ = 125 °C TC = 160 °C rectangular V 0.80 V T VJ = 175 °C 10 A TVJ = 175 °C 0.44 V 13.2 mΩ 1.7 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C EAS non-repetitive avalanche energy I AS = I AR repetitive avalanche current VA = 1.5·V R typ. f = 10 kHz © 2021 IXYS all rights reserved max. Unit 100 V d = 0.5 for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.25 TC = 25°C 12 V f = 1 MHz 5A L = 100 µH 90 120 146 TVJ = 25 °C Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 1.25 mJ 0.5 A 20211013a DSS10-01AS Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 20 mounting force with clip g 60 N Product Marking XXXXXXXXX Part Number IXYS yywwZ Logo Date Code Location 123456 Lot# Ordering Standard Alternative Ordering Number DSS10-01AS-TRL DSS10-01AS-TUB Similar Part DSS10-01A DSA10I100PM DSS20-01AC Equivalent Circuits for Simulation I V0 R0 Package TO-220AC (2) TO-220ACFP (2) ISOPLUS220AC (2) * on die level Delivery Mode Tape & Reel Tube Quantity 800 50 Code No. 525205 477222 Voltage class 100 100 100 T VJ = 175°C Schottky V 0 max threshold voltage 0.44 R0 max slope resistance * 10 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Marking on Product DSS10-01AS-TRL DSS10-01AS V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20211013a DSS10-01AS Outlines TO-263 (D2Pak) Dim. W A Supplier Option D1 L1 c2 A1 H D E A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) W Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 3 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20211013a DSS10-01AS Schottky 20 101 1000 TVJ=175°C 100 10 150°C 10-1 IF [A] 1 0.0 100°C IR TVJ = 175°C 150°C 125°C 25°C CT 125°C -2 10 100 75°C [mA] [pF] 50°C 10-3 25°C 10-4 0.2 0.4 0.6 0.8 TVJ = 25°C 1.0 10 0 20 40 VF [V] 60 80 100 Fig. 2 Typ. reverse current IR vs. reverse voltage VR 40 20 40 60 80 100 VR [V] VR [V] Fig. 1 Max. forward voltage drop characteristics 0 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 35 30 30 d = 0.5 DC 25 P(AV) IF(AV) 20 20 [W] [A] d= DC 0.5 0.33 0.25 0.17 0.08 15 10 10 5 0 0 0 40 80 120 160 0 5 10 15 20 25 30 35 IF(AV) [A] TC [°C] Fig. 4 Average forward current IF(AV) vs. case temp. TC Fig. 5 Forward power loss characteristics 2 1 D=0.5 0.33 0.25 0.17 ZthJC 0.08 0.1 [K/W] Single Pulse (Thermal Resistance) 0.01 0.0001 Note: All curves are per diode 0.001 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20211013a