IXFA4N100Q-TRL

IXFA4N100Q IXFP4N100Q HiperFETTM Power MOSFETs Q-Class VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1000V = 4A ≤ 3.0Ω Ω TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 4 16 A A IA EAS TC = 25°C TC = 25°C 4 700 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns PD TC = 25°C 150 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C z 10..65/2.2..14.6 1.13/10 Nm/lb.in. Nm/lb.in. z 2.5 3.0 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s MC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220 D (Tab) TO-220AB (IXFP) G G = Gate S = Source z z z z z BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1.5mA IGSS VGS = ± 20V, VDS = 0V ± 100 nA IDSS VDS = VDSS, VGS = 0V 50 μA 1 mA RDS(on) 2.5 TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 V 4.5 3.0 V Ω z z International Standard Packages Avalanche Rated Fast Intrinsic Diode Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance High Power Density Easy to Mount Space Savings Applications z z z z z © 2011 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Advantages Characteristic Values Min. Typ. Max. 1000 D (Tab) Features z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) DS DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS98705B(04/11) IXFA4N100Q IXFP4N100Q Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 1.5 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss 2.5 S 1050 pF 120 pF 30 pF 17 ns 15 ns 32 ns 18 ns 39 nC VGS = 0V, VDS = 25V, f = 1MHz Coss Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 4.7Ω (External) tf Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs TO-263 Outline Qgd 9 nC 23 nC 0.80 °C/W RthJC RthCS TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 4 A Repetitive, Pulse Width Limited by TJM 16 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = IS, -di/dt = 100A/μs VR = 100V, VGS = 0V Note 1. 0.52 1.80 TO-220 Outline 250 ns μC A Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA4N100Q IXFP4N100Q Figure 1. Output Characteristics at 25OC Figure 2. Extended Output Characteristics at 125OC 6 4 VGS = 10V 9V 8V TJ = 25°C TJ = 25°C 5 VGS = 10V 9V 8V 7V 7V 2 ID - Amperes ID - Amperes 3 6V 4 3 6V 2 1 1 5V 5V 0 0 0 2 4 6 8 0 10 4 8 16 20 VCE - Volts VDS - Volts Figure 4. Admittance Curves Figure 3. Output characteristics at 125°C 4 4 VGS = 10V 9V 8V 3 3 7V 2 ID - Amperes TJ = 125°C ID - Amperes 12 6V 1 O TJ = 125 C 2 O TJ = 25 C 1 5V 0 0 0 5 10 15 3 20 4 VDS - Volts 2.2 TJ = 125°C 1.8 1.6 1.4 TJ = 25°C 1.2 8 2.4 RDS(ON) - Normalized RDS(ON) - Normalized 2.0 7 Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ VGS = 10V 2.2 6 VGS - Volts Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID 2.4 5 VGS = 10V ID = 2A 2.0 1.8 1.6 1.4 1.2 1.0 1.0 0.8 0 1 2 3 4 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 5 6 0.8 25 50 75 100 TJ - Degrees C 125 150 IXFA4N100Q IXFP4N100Q Figure 8. Capacitance Curves Figure 7. Gate Charge 2000 15 Ciss Capacitance - pF VDS = 600 V ID = 3 A IG = 10 mA 12 VGS - Volts 1000 9 6 f = 1MHz Coss Crss 100 3 10 0 0 10 20 30 40 50 0 60 5 10 15 20 25 30 35 VDS - Volts Gate Charge - nC Figure 9. Forward Voltage Drop of the Intrinsic Diode 5 10 4 8 ID - Amperes ID - Amperes 60 6 TJ = 125OC 4 TJ = 25OC 2 3 2 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 -50 VSD - Volts -25 0 25 50 75 100 125 150 TC - Degrees Centigrade Figure 11. Transient Thermal Resistance R(th)JC - K/W 1.00 0.10 0.01 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXT_4N100Q (4U)04-01-11-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.