IXFA5N100P

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFA5N100P IXFH5N100P IXFP5N100P VDSS ID25 = 1000V = 5A ≤ 2.8Ω Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 5 A IDM TC = 25°C, pulse width limited by TJM 10 A IA TC = 25°C 5 A EAS TC = 25°C 300 mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL 1.6mm (0.062) from case for 10s 300 °C TSOLD Plastic body for 10s 260 °C Md Mounting torque 1.13 / 10 Nm/lb.in. Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g (TO-220,TO-247) G G VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V z z z z V ±100 nA TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 10 μA 750 μA 2.8 Ω z D = Drain TAB = Drain International standard packages Dynamic dv/dt Rating Avalanche Rated Low RDS(ON), rugged PolarTM process Low QG Low Drain-to-Tab capacitance Low package inductance Easy to mount Space savings Applications: z z z z z z © 2008 IXYS CORPORATION, All rights reserved (TAB) Advantages V 6.0 DS Features z BVDSS (TAB) S G = Gate S = Source z Characteristic Values Min. Typ. Max. D TO-220 (IXFP) z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) (TAB) TO-247 (IXFH) z RDS(on) S Maximum Ratings DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies Uninterrupted power supplies AC motor control High speed power switching applications DS99923(07/08) IXFA5N100P IXFH5N100P IXFP5N100P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max gfs VDS= 20V, ID = 0.5 • ID25, Note 1 2.4 RGi Gate input resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz tr td(off) tf Qgs Ω pF 20 pF 12 ns 13 ns 30 ns 37 ns 33.4 nC 10.6 nC 14.4 nC RG = 5Ω (External) Qgd 1.6 pF VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 S 113 Resistive Switching Times Qg(on) 4.0 1830 Crss td(on) (TO-220) (TO-247) Symbol Test Conditions IS VGS = 0V Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC ISM Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 5 A Repetitive, pulse width limited by TJM 20 A VSD IF = IS, VGS = 0V, Note 1 1.3 V trr IF = 5A, VGS = 0V 200 ns QRM e °C/W °C/W 0.50 0.25 Source-Drain Diode IRM ∅P 0.50 °C/W RthJC RthCS RthCS TO-247 (IXFH) Outline -di/dt = 100A/μs VR = 100V 7.4 A 0.43 μC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-220 (IXFP) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-263 (IXFA) Outline Pins: 1 - Gate 2 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA5N100P IXFH5N100P IXFP5N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 8 5.0 VGS = 10V 8V 4.5 VGS = 10V 9V 8V 7 4.0 6 7V ID - Amperes ID - Amperes 3.5 3.0 2.5 2.0 5 7V 4 3 1.5 2 6V 1.0 6V 1 0.5 5V 0.0 0 0 2 4 6 8 10 12 14 0 5 10 VDS - Volts 20 25 30 Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 5.0 2.8 VGS = 10V 8V 4.5 VGS = 10V 2.4 RDS(on) - Normalized 4.0 7V 3.5 ID - Amperes 15 VDS - Volts 3.0 2.5 2.0 6V 1.5 1.0 2.0 I D = 5A I D = 2.5A 1.6 1.2 0.8 5V 0.5 0.0 0.4 0 3 6 9 12 15 18 21 24 27 30 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 2.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 5.5 2.6 VGS = 10V 2.4 5.0 TJ = 125ºC 4.5 4.0 2.0 ID - Amperes RDS(on) - Normalized 2.2 1.8 1.6 1.4 3.5 3.0 2.5 2.0 1.5 1.2 1.0 TJ = 25ºC 1.0 0.5 0.8 0.0 0 1 2 3 4 5 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 6 7 8 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA5N100P IXFH5N100P IXFP5N100P Fig. 7. Input Admittance 6.0 4.0 5.5 TJ = 125ºC 25ºC - 40ºC 3.5 TJ = - 40ºC 5.0 25ºC 4.5 3.0 g f s - Siemens ID - Amperes Fig. 8. Transconductance 4.5 2.5 2.0 1.5 4.0 125ºC 3.5 3.0 2.5 2.0 1.5 1.0 1.0 0.5 0.5 0.0 0.0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0.0 0.5 1.0 VGS - Volts 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 10 14 9 VDS = 500V 8 I G = 10mA I D = 2.5A 12 VGS - Volts IS - Amperes 7 10 8 6 TJ = 125ºC 5 4 3 TJ = 25ºC 4 6 2 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 4 VSD - Volts 8 12 16 20 24 28 32 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 100 0.10 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_5N100P(55-744)6-27-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.