IXFH150N20T

Advance Technical Information IXFT150N20T IXFH150N20T TrenchTM HiperFETTM Power MOSFETs VDSS ID25 = 200V = 150A ≤ 15mΩ Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 200 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 150 A IDM TC = 25°C, Pulse Width Limited by TJM 375 A IA EAS TC = 25°C TC = 25°C 75 1.5 A J PD TC = 25°C 890 W dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns -55 to +150 °C TJM +150 °C Tstg -55 to +150 °C TJ TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features TL 1.6mm (0.063in) from Case for 10s 300 °C z TSOLD Plastic Body for 10s 260 °C z Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-268 TO-247 4 6 g g International Standard Packages Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 200 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 z z z V 5.0 V ±200 nA 25 μA z 1.5 mA z Applications z 15 mΩ z z z z © 2011 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100426(12/11) IXFT150N20T IXFH150N20T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 66 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 112 S 11.7 nF 1250 pF 162 pF 43 ns 12 ns 45 ns 12 ns 177 nC 70 nC 44 nC Terminals: 1 - Gate 3 - Source 2,4 - Drain 0.14 °C/W RthJC RthCS TO-268 Outline TO-247 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 150 A ISM Repetitive, Pulse Width Limited by TJM 600 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr IRM QRM IF = 75A, -di/dt = 100A/μs, VR = 75V, VGS = 0V 100 8.0 0.4 TO-247 Outline ns A μC 1 2 ∅P 3 e Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 3 - Source Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT150N20T IXFH150N20T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 150 350 VGS = 10V 8V VGS = 10V 8V 300 7V 250 ID - Amperes ID - Amperes 100 6V 50 200 7V 150 100 6V 50 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 2.4 10 15 20 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 75A Value vs. Junction Temperature 2.8 150 VGS = 10V 8V 7V VGS = 10V 2.4 R DS(on) - Normalized ID - Amperes 5 VDS - Volts 100 6V 50 5V 2.0 I D = 150A I D = 75A 1.6 1.2 0.8 4V 0 0.4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 5 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 75A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 160 3.0 VGS = 10V 2.6 140 TJ = 125ºC 2.2 ID - Amperes R DS(on) - Normalized 120 1.8 TJ = 25ºC 1.4 100 80 60 40 1.0 20 0.6 0 0 40 80 120 160 200 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 240 280 320 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT150N20T IXFH150N20T Fig. 7. Input Admittance Fig. 8. Transconductance 180 180 160 160 TJ = - 40ºC 140 g f s - Siemens 120 ID - Amperes 140 TJ = 125ºC 25ºC - 40ºC 100 80 25ºC 120 100 125ºC 80 60 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 160 180 200 10 VDS = 100V 9 300 I D = 75A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 120 Fig. 10. Gate Charge 350 200 150 TJ = 125ºC 100 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 40 60 VSD - Volts 80 100 120 180 Fig. 12. Forward-Bias Safe Operating Area @ TC = 25ºC f = 1 MHz RDS(on) Limit 25µs 100 Ciss IC - Amperes 10,000 Coss 100µs 10 1,000 1 1ms TJ = 150ºC TC = 25ºC Single Pulse Crss 10ms DC 0.1 100 5 160 1000 100,000 0 140 QG - NanoCoulombs Fig. 11. Capacitance Capacitance - PicoFarads 100 ID - Amperes 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VCE - Volts 100ms 1000 IXFT150N20T IXFH150N20T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 18 18 RG = 2Ω , VGS = 10V 17 VDS = 100V 16 15 I D t r - Nanoseconds 16 t r - Nanoseconds RG = 2Ω , VGS = 10V 17 VDS = 100V = 75A 14 I 13 D = 150A 14 13 12 12 11 11 10 TJ = 125ºC 15 TJ = 25ºC 10 25 35 45 55 65 75 85 95 105 115 125 70 80 90 100 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 130 110 TJ = 125ºC, VGS = 10V t r - Nanoseconds 80 50 40 30 0 6 8 10 12 14 16 16 55 I D = 75A 12 50 I D = 150A 45 4 25 18 35 45 55 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 19 15 55 14 50 13 45 TJ = 25ºC 12 40 11 110 115 40 125 120 130 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 140 35 150 td(off) - - - 250 TJ = 125ºC, VGS = 10V I D = 150A VDS = 100V t f - Nanoseconds 60 TJ = 125ºC 100 105 160 200 I 120 D = 75A 150 80 100 40 50 0 0 2 4 6 8 10 RG - Ohms 12 14 16 18 t d ( o f f ) - Nanoseconds 65 90 tf 200 16 80 95 300 70 VDS = 100V 70 85 240 t d ( o f f ) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 2Ω, VGS = 10V 17 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 75 tf 65 TJ - Degrees Centigrade RG - Ohms 18 60 VDS = 100V 8 10 4 td(off) - - - - t d ( o f f ) - Nanoseconds 70 I D = 75A 2 150 RG = 2Ω, VGS = 10V 20 t d ( o n ) - Nanoseconds 90 I D = 150A 120 140 65 tf VDS = 100V 160 130 24 td(on) - - - - t f - Nanoseconds 200 120 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 240 tr 110 ID - Amperes IXFT150N20T IXFH150N20T Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_150N20T(8G)12-14-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.