IXFH58N20

HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM42N20 IXFM50N20 IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM 42 50 58 168 200 232 42 50 58 A A A A A A A A A 30 mJ 5 V/ns 300 W 42N20 50N20 58N20 42N20 50N20 58N20 42N20 50N20 58N20 . EAR TC = 25°C dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W PD TC = 25°C -55 ... +150 °C 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g VGS = 0 V, ID = 250 mA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved TO-268 (D3) Case Style G TJM VDSS (TAB) Maximum Ratings TC = 25°C Test Conditions 42 A 60mW 50 A 45mW 58 A 40mW TO-247 AD (IXFH) Test Conditions Symbol 200 V 200 V 200 V RDS(on) trr £ 200 ns Symbol IAR ID25 V 4 V ±100 nA 200 1 mA mA S TO-204 AE (IXFM) (TAB) S Package unavailable D G = Gate, S = Source, G D = Drain, TAB = Drain Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) • High power surface mountable package • High power density 91522H (2/98) 1-4 IXFH/IXFM42N20 IXFH/IXFM50N20 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Min. IXFH/IXFM58N20 IXFT50N20 IXFT58N20 Characteristic Values Typ. Max. 0.060 W 0.045 W 0.040 W RDS(on) 42N20 50N20 58N20 Pulse test, t £ 300 ms, duty cycle d £ 2 % gfs VDS = 10 V; ID = 0.5 ID25, pulse test C iss Coss C rss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) tr td(off) tf VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 R G = 1 W (External) 18 15 72 16 25 20 90 25 ns ns ns ns VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 190 35 95 220 50 110 (TO-247 and TO-204 Case styles) 0.25 Qg(on) Qgs Qgd RthJC RthCK VGS = 10 V, ID = 0.5 ID25 Source-Drain Diode 20 32 S 4400 800 285 pF pF pF IS VGS = 0 V 42N20 50N20 58N20 ISM Repetitive; pulse width limited by TJM 42N20 50N20 58N20 VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % Inches Min. Max. 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 nC nC nC C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 0.42 K/W K/W G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 42 50 58 A A A 168 200 232 A A A 1.5 V 200 300 ns ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-204 AE (IXFM) Outline . Test Conditions Dim. Millimeter Min. Max. A B Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol TO-247 AD (IXFH) Outline t rr QRM IF = 25A, -di/dt = 100 A/ms, VR = 100 V IRM TO-268AA (D3 PAK) TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 1.5 2.6 mC mC TJ = 25°C TJ = 125°C 19 23 A A Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Dim. A B C D E F G H J K Q R Millimeter Min. Max. 38.61 39.12 - 22.22 6.40 11.40 1.45 1.60 1.52 3.43 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 26.66 Inches Min. Max. 1.520 1.540 - 0.875 0.252 0.449 0.057 0.063 0.060 0.135 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.050 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH/IXFM42N20 IXFH/IXFM50N20 Fig. 1 Output Characteristics 100 Fig. 2 Input Admittance 90 9V 8V 7V 70 80 ID - Amperes 80 ID - Amperes 100 VGS = 10V TJ = 25°C 90 IXFH/IXFM58N20 IXFT50N20 IXFT58N20 6V 60 50 40 30 5V 20 70 TJ = 25°C 60 50 40 30 20 10 10 0 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 VDS - Volts 4 5 6 7 8 9 10 VGS - Volts Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.6 2.25 2.0 1.8 1.6 1.4 VGS = 10V 1.2 RDS(on) - Normalized 2.2 . RDS(on) - Normalized 2.4 VGS = 15V 1.0 25 50 75 100 125 1.75 ID = 25A 1.50 1.25 1.00 0.75 0.8 0 2.00 150 0.50 -50 175 -25 0 ID - Amperes 1.2 70 1.1 BV/VG(th) - Normalized ID - Amperes VGS(th) 58N20 50N20 42N20 40 30 20 100 125 150 BVDSS 1.0 0.9 0.8 0.7 0.6 10 0 -50 75 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 80 50 50 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 60 25 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFH/IXFM42N20 IXFH/IXFM50N20 IXFH/IXFM58N20 IXFT50N20 IXFT58N20 Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 14 VDS = 100V ID = 50A 10 ID - Amperes VGE - Volts 10µs 100 Limited by R DS(on) 12 I = 10mA G 8 6 100µs 1ms 10 10ms 4 100ms 2 0 1 0 25 50 75 100 125 150 175 200 1 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 4500 50 40 3500 ID - Amperes f = 1MHz VDS = 25V 3000 2500 2000 1500 Coss 1000 0 0 5 10 20 TJ = 25°C 10 Crss 500 TJ = 125°C 30 . Capacitance - pF Fig.10 Source Current vs. Source to Drain Voltage Ciss 4000 100 200 10 15 20 0 0.4 25 0.6 VDS - Volts 0.8 1.0 1.2 1.4 VSD - Volts Thermal Response - K/W Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.