IXFT32N50

HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFH30N50 IXFH32N50 Symbol Test Conditions IXFT32N50 VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C pulse width limited by TJM TC = 25°C EAS Maximum Ratings V V ±20 V V ±30 30N50 32N50 30N50 32N50 30N50 32N50 30 32 120 128 30 32 A A A A A A TC = 25°C 1.5 J EAR ID = 25°C 45 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 PD TC = 25°C TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque VDSS VGS(th) W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 1.13/10 500 VDS = VGS, ID = 4 mA VGS(th) temperature coefficient 2 VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) Nm/lb.in. V %/K 0.102 4 -0.206 ±100 TJ = 25°C TJ = 125°C 32N50 30N50 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. V %/K nA 200 VGS = 10 V, ID = 15A © 2000 IXYS All rights reserved g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 1 mA VDSS temperature coefficient IGSS 500 V 500 V 30 A 32 A 0.16 W 0.15 W TO-247 AD (IXFH) TO-268 (D3) Case Style G (TAB) S V/ns 6 Test Conditions RDS(on) D (TAB) 360 Weight Symbol ID25 trr £ 250 ns 500 500 TL VDSS 1 0.15 0.16 mA mA W W G = Gate, S = Source, D = Drain, TAB = Drain Features • • • • International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Diode Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls Advantages • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) • Space savings • High power density 97518H (6/99) 1-4 IXFH 30N50 IXFT 30N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 18 5200 640 240 C iss Coss C rss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) tr td(off) tf VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 W (External) Qg(on) Qgs Qgd VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RthJC RthCK (TO-247 Case Style) Source-Drain Diode 28 5700 750 310 pF pF pF 35 42 110 26 45 50 140 35 ns ns ns ns 227 29 110 300 40 145 nC nC nC 0.35 K/W K/W 0.25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Test Conditions IS VGS = 0 V 30N50 32N50 30 32 A A ISM Repetitive; pulse width limited by TJM 30N50 32N50 120 128 A A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 400 0.85 ns ns mC 8 A QRM IF = IS -di/dt = 100 A/ms, VR = 100 V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 25°C IRM TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 TO-247 AD (IXFH) Outline S Symbol t rr IXFH 32N50 IXFT 32N50 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 30N50 IXFT 30N50 Figure 2. Output Characteristics at 125OC Figure 1. Output Characteristics at 25OC 80 70 60 50 6V 50 40 30 5V 20 40 0 30 5V 20 0 4 8 12 16 0 20 0 4 8 VDS - Volts 16 20 Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.8 2.8 VGS = 10V VGS = 10V 2.4 RDS(ON) - Normalized RDS(ON) - Normalized 12 VDS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID Tj=1250 C 2.0 1.6 Tj=250 C 1.2 0 10 20 30 40 50 2.4 ID = 32A 2.0 ID = 16A 1.6 1.2 0.8 25 60 50 Figure 5. Drain Current vs. Case Temperature 100 125 150 Figure 6. Admittance Curves 40 50 IXFH32N50 32 40 ID - Amperes IXFH30N50 24 16 8 0 -50 75 TJ - Degrees C ID - Amperes ID - Amperes 6V 10 10 0.8 VGS=10V 9V 8V 7V TJ = 125OC ID - Amperes ID - Amperes 60 VGS=10V 9V 8V 7V TJ = 25OC IXFH 32N50 IXFT 32N50 30 TJ = 125oC 20 TJ = 25oC 10 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0 0 2 4 6 8 VGS - Volts 3-4 IXFH 30N50 IXFT 30N50 Figure 7. Gate Charge Figure 8. Capacitance Curves 14 4500 12 F = 1MHz 4000 Capacitance - pF Vds=300V ID=30A IG=10mA 10 VGS - Volts IXFH 32N50 IXFT 32N50 8 6 4 Ciss 3500 3000 2500 2000 Coss 1500 1000 Crss 2 500 0 0 0 50 100 150 200 250 300 0 5 10 Gate Charge - nC 15 20 25 VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 30 100 VGS= 0V ID - Amperes ID - Amperes 1 ms 10 80 60 TJ=125OC 40 10 ms 100 ms 1 DC O TC = 25 C 20 TJ=25OC 0 0.4 0.1 0.6 0.8 1.0 1.2 10 VSD - Volts 100 500 VDS - Volts Figure 10. Transient Thermal Resistance 0.40 0.35 R(th)JC - K/W 0.30 0.25 0.20 0.15 0.10 0.05 0.00 10-3 10-2 10-1 100 101 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4