IXFT36N50P

IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = = ≤ ≤ RDS(on) trr 500V 36A Ω 170mΩ 200ns PLUS220SMD (IXFV...S) G S D (Tab) PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 36 A IDM TC = 25°C, Pulse Width Limited by TJM 90 A IA EAS TC = 25°C TC = 25°C 36 1.5 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 540 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 4.0 4.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-247) FC Mounting Force Weight PLUS220 TO-268 TO-247 (PLUS220) G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V G S D (Tab) TO-247 (IXFH) G RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2011 IXYS CORPORATION, All Rights Reserved D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG V 5.0 V ±100 nA Advantages z z TJ = 125°C D (Tab) S TO-268 (IXFT) z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D 25 μA 500 μA z High Power Density Easy to Mount Space Savings 170 mΩ DS99364F(07/11) IXFH36N50P IXFV36N50P IXFT36N50P IXFV36N50PS Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 23 Ciss Coss 36 S 5500 pF 510 pF 40 pF 25 27 ns ns 75 21 ns ns 93 nC 30 nC 31 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr Resistive Switching Times td(off) tf RG = 3Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.23 °C/W RthJC RthCS (TO-247 & PLUS220) 0.25 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 36 A Repetitive, Pulse Width Limited by TJM 144 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 25A, -di/dt = 100A/μs Note 0.8 8.0 VR = 100V, VGS = 0V 200 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH36N50P IXFV36N50P IXFT36N50P IXFV36N50PS TO-268 Outline PLUS220 (IXFV) Outline Terminals: 1 - Gate 3 - Source 2,4 - Drain TO-247 Outline 1 2 PLUS220SMD (IXFV_S) Outline ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC © 2011 IXYS CORPORATION, All Rights Reserved IXFH36N50P IXFV36N50P IXFT36N50P IXFV36N50PS Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 36 80 VGS = 10V 7V VGS = 10V 70 30 7V 60 6V ID - Amperes ID - Amperes 24 18 50 6.5V 40 30 12 6V 5V 20 5.5V 6 10 4V 5V 0 0 0 1 2 3 4 5 6 0 7 5 10 20 25 Fig. 4. RDS(on) Normalized to ID = 18A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 36 3.4 VGS = 10V 7V VGS = 10V 30 3.0 R DS(on) - Normalized 6V 24 ID - Amperes 15 VDS - Volts VDS - Volts 5.5V 18 12 5V 2.6 I D = 36A 2.2 I D = 18A 1.8 1.4 1.0 6 0.6 4.5V 0 0.2 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 18A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 40 3.4 VGS = 10V 35 3.0 30 2.6 ID - Amperes R DS(on) - Normalized TJ = 125ºC 2.2 1.8 TJ = 25ºC 1.4 25 20 15 10 1.0 5 0 0.6 0 10 20 30 40 50 60 70 80 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFH36N50P IXFV36N50P IXFT36N50P IXFV36N50PS Fig. 7. Input Admittance Fig. 8. Transconductance 70 TJ = - 40ºC 50 60 TJ = 125ºC 25ºC - 40ºC 50 g f s - Siemens ID - Amperes 40 30 20 25ºC 40 125ºC 30 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 40 VGS - Volts 50 60 70 80 90 90 100 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 10 90 9 VDS = 250V 80 8 I G = 10mA 70 7 60 6 VGS - Volts IS - Amperes I D =18A 50 40 TJ = 125ºC 30 5 4 3 TJ = 25ºC 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 VSD - Volts 30 40 50 60 70 80 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 25µs 1,000 ID - Amperes Capacitance - PicoFarads RDS(on) Limit Ciss Coss 100µs 10 1ms 100 DC 10ms TJ = 150ºC TC = 25ºC Single Pulse Crss f = 1 MHz 10 1 0 5 10 15 20 25 VDS - Volts © 2011 IXYS CORPORATION, All Rights Reserved 30 35 40 10 100 VDS - Volts 1,000 IXFH36N50P IXFV36N50P IXFT36N50P IXFV36N50PS Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance aaaa 0.4 Z (th)JC - ºC / W 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_36N50P (7J) 7-15-11-E Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.