IXTK102N30P

PolarHTTM Power MOSFET IXTK 102N30P VDSS = 300 V ID25 = 102 A Ω RDS(on) ≤ 33 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25° C 102 A ID(RMS) External lead current limit 75 A IDM TC = 25° C, pulse width limited by TJM 250 A IAR TC = 25° C 60 A EAR TC = 25° C 60 mJ EAS TC = 25° C 2.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 700 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg TL TSOLD Md 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Weight TO-264 300 °C 260 °C 1.13/10 Nm/lb.in. 10 g TO-264 (IXTK) G D = Drain TAB = Drain Features l l l International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l Easy to mount Space savings High power density Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 300 VGS(th) VDS = VGS, ID = 500µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved (TAB) S G = Gate S = Source l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) D TJ = 125° C V 5.0 V ±200 nA 25 250 µA µA 33 mΩ DS99130E(12/05) IXTK 102N30P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 45 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 57 S 7500 pF 1150 pF 230 pF Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A td(off) RG = 3.3 Ω (External) tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 30 ns 28 ns 130 ns 30 ns 224 nC 50 nC 110 nC RthJC TO-264 (IXTK) Outline 0.18° C/W RthCS ° C/W 0.15 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 102 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 250 3.3 ns µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTK 102N30P Fig. 2. Exte nde d Output Characte r is tics @ 25ºC Fig. 1. Output Characte ris tics @ 25ºC 250 110 V GS = 10V 9V 8V 100 90 9V 200 80 175 70 60 ID - Amperes ID - Amperes V GS = 10V 225 7V 50 40 30 6V 20 8V 150 7V 125 100 75 6V 50 10 5V 25 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 V DS - V olts 2 Fig. 3. Output Characte ris tics @ 125ºC 8 10 12 V DS - V olts 14 16 18 20 2.8 V GS = 10V 9V 8V 90 2.6 V GS = 10V 2.4 80 RDS(on) - Normalized 100 7V 70 60 50 6V 40 30 20 2.2 2 1.8 1.6 I D = 102A 1.4 I D = 51A 1.2 1 0.8 10 0.6 5V 0 0.4 0 1 2 3 4 5 6 7 8 -50 9 -25 V DS - V olts 50 75 100 125 150 90 V GS = 10V 2.4 25 Fig. 6. Drain Curre nt vs . Cas e Te m pe rature 0.5 ID25 V alue vs . ID 2.6 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 80 2.2 External Lead Current Limit 70 TJ = 125ºC 2 ID - Amperes RDS(on) - Normalized 6 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e 110 ID - Amperes 4 1.8 1.6 1.4 60 50 40 30 20 1.2 TJ = 25ºC 1 0.8 10 0 0 25 50 75 100 125 150 175 200 225 250 ID - A mperes © 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTK 102N30P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 150 100 90 80 TJ = -40ºC 25ºC 125ºC 70 100 gfs - Siemens ID - Amperes 125 75 50 TJ = 125ºC 25ºC -40ºC 25 60 50 40 30 20 10 0 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 0 25 50 75 V GS - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 125 150 175 200 Fig. 10. Gate Char ge 10 300 V DS = 150V 9 250 I D = 51A 8 I G = 10m A 7 200 V G S - Volts IS - Amperes 100 ID - A mperes 150 100 6 5 4 3 TJ = 125ºC 2 TJ = 25ºC 50 1 0 0 0.4 0.6 0.8 1 1.2 V SD - V olts 0 1.4 50 75 100 125 150 175 200 225 QG - nanoCoulombs Fig. 12. For w ard-Bias Safe Ope rating Are a Fig. 11. Capacitance 10000 1000 TJ = 150ºC R DS(on) Lim it ID - Amperes C iss Capacitance - picoFarads 25 1000 C oss TC = 25ºC 25µs 100 100µs 1m s 10 10m s DC f = 1MH z C rs s 100 1 0 5 10 15 20 25 V DS - V olts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V DS - V olts 1000 IXTK 102N30P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R(th)JC - ºC/W 1.00 0.10 0.01 1 10 100 Pulse Width - milliseconds © 2006 IXYS All rights reserved 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.