2N4403

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4403 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. EMILTTER Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Collector Power dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 ~ +150 ℃ RRӨJA ӨJA Thermal junctiontotoAmbient Ambient ThermalResistance, Resistance,junction 200 357 2. BASE 3. COLLECTOR ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA hFE(1) VCE=-1V,IC=-0.1mA 30 hFE(2) VCE=-1V,IC=-1mA 60 hFE(3) VCE=-1V,IC=-10mA 100 hFE(4) VCE=-1V,IC=-150mA 100 hFE(5) VCE=-2V,IC=-500mA 20 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 VCE(sat)1 IC=-150mA,IB=-15mA -0.4 V VCE(sat)2 IC=-500mA,IB=-50mA -0.75 V VBE(sat)1 IC=-150mA,IB=-15mA -0.95 V VBE(sat)2 IC=-500mA,IB=-50mA -1.3 V Transition frequency fT Collector capacitance Cob VCE=-10V,IC=-20mA,f=100MHz VCB=-10V,IE=0,f=100KHz -0.75 200 MHz 8.5 pF 15 ns Delay time td Rise time tr VCC=-30V, IC=-150mA 20 ns Storage time tS IB1=- IB2=-15mA 225 ns Fall time tf 30 ns www.cj-elec.com 1 E,Dec,2015 Typical Characteristics Static Characteristic COMMON EMITTER Ta=25℃ COMMON EMITTER VCE= -1V -2.0mA -1.8mA IC Ta=100℃ -1.6mA -1.4mA -200 -1.2mA -1.0mA -150 -0.8mA -0.6mA -100 Ta=25℃ 100 DC CURRENT GAIN IC —— hFE (mA) -250 COLLECTOR CURRENT hFE 1000 -300 10 -0.4mA -50 IB=-0.2mA -0 1 -0 -1 -2 -3 COLLECTOR-EMITTER VOLTAGE VBEsat —— -1200 -4 -1 IC VCEsat -600 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ -800 -600 Ta=100 ℃ -400 -200 -1 -10 -100 COLLECTOR CURREMT —— -600 -100 (mA) IC IC —— IC Ta=100 ℃ -100 Ta=25℃ -10 -0.1 -600 -1 -10 COLLECTOR CURREMT (mA) VBE fT 500 -600 —— -100 IC -600 (mA) IC (MHz) COMMON EMITTER VCE= -1V -100 TRANSITION FREQUENCY -10 T =2 5℃ a T =1 00℃ a COLLECTOR CURRENT IC fT (mA) IC β=10 β=10 -1000 -0 -0.1 -10 COLLECTOR CURRENT VCE (V) -1 100 COMMON EMITTER VCE= -10V Ta=25℃ -0.1 -200 -30 -400 -600 -800 -1000 -1 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ (pF) C CAPACITANCE PC 750 Cib 10 Cob —— -80 IC -100 (mA) Ta 625 500 375 250 125 0 -1 REVERSE VOLTAGE www.cj-elec.com -60 COLLECTOR CURRENT f=1MHz IE=0/IC=0 1 -0.1 -40 -20 BASE-EMMITER VOLTAGE VBE (mV) -10 V 0 -30 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃ ) E,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 E,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 E,Dec,2015