2SA1013

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors JC(T 2SA1013 TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURE y High Voltage:VCEO=-160V y Large Continuous Collector Current Capability y Complementary to 2SC2383 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=- 100μA , IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -160 V Emitter-base breakdown voltage V(BR)EBO IE= -10μA, IC=0 -6 V Collector cut-off current ICBO VCB=-150 V , IE=0 -1 μA Emitter cut-off current IEBO VEB=-6V, IC=0 -1 μA DC current gain hFE VCE=-5 V, IC=- 200mA Collector-emitter saturation voltage VCE(sat) IC= -500m A, IB= -50mA Base-emitter voltage VBE IC= -5mA, VCE=- 5V Transition frequency fT VCE= -5 V, IC= -200mA Cob VCB=-10V, IE=0,f=1MHz Collector Output capacitance 60 -0.45 320 -1.5 V -0.75 V 15 MHz 35 pF CLASSIFICATION OF hFE Rank R O Y Range 60-120 100-200 160-320 www.cj-elec.com 1 C,Nov,2015 Typical Characteristics Static Characteristic (mA) -1.0mA -0.9mA DC CURRENT GAIN IC VCE= -5V COMMON EMITTER Ta=25℃ -0.8mA -200 -0.7mA COLLECTOR CURRENT hFE —— IC 600 hFE -300 -0.6mA -0.5mA -0.4mA -100 o Ta=100 C 400 200 o Ta=25 C -0.3mA -0.2mA IB=-0.1mA -0 0 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 COLLECTOR-EMITTER VOLTAGE VCE -10 -11 -12 -1 VBEsat —— IC -1.2 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -1.0 Ta=25℃ -0.6 -0.4 VCEsat —— -400 β=10 -0.8 -10 COLLECTOR CURRENT (V) Ta=100℃ -100 IC -1000 (mA) IC β=10 -300 -200 Ta=100℃ -100 -0.2 Ta=25℃ -0.0 -0 -1 -10 -100 COLLECTOR CURRENT fT —— -1 -100 COLLECTOR CURRENT IC Cob / Cib 1000 —— IC -1000 (mA) VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C (pF) 80 C 60 CAPACITANCE TRANSITION FREQUENCY -10 (mA) fT (MHz) 100 -1000 IC 40 Cib 100 Cob 10 20 VCE=-5V o Ta=25 C 0 -0 -50 -100 -150 -200 -250 COLLECTOR CURRENT VBE —— -300 IC -350 1 -0.1 -400 IC Pc 1.0 -100 COLLECTOR POWER DISSIPATION Pc (W) IC (mA) -1000 COLLECTOR CURRENT -1 -10 REVERSE VOLTAGE (mA) o Ta=100 C -10 Ta=25℃ -1 —— V -20 (V) Ta 0.8 0.6 0.4 0.2 VCE=-5V -0.1 -0.2 0.0 -0.3 -0.4 -0.5 -0.6 -0.7 BASE-EMITTER VOLTAGE www.cj-elec.com -0.8 -0.9 -1.0 0 25 50 75 AMBIENT TEMPERATURE VBE(V) 2 100 Ta 125 150 (℃ ) C,Nov,2015 Dimensions In Millimeters Min. Max. 4.800 5.000 1.730 2.030 0.440 0.600 0.940 1.100 0.350 0.450 5.900 6.100 4.000 8.500 8.700 1.500 TYP. 2.900 3.100 13.800 14.200 1.600 0.000 0.380 Symbol A A1 b b1 c D D1 E e e1 L Φ h www.cj-elec.com 3 Dimensions In Inches Min. Max. 0.189 0.197 0.068 0.080 0.017 0.024 0.037 0.043 0.014 0.018 0.232 0.240 0.157 0.335 0.343 0.059 TYP. 0.114 0.122 0.543 0.559 0.063 0.000 0.015 C,Nov,2015 A,Jun,2014 www.cj-elec.com 4 C,Nov,2015 A,Jun,2014