2SD1766

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1766 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES z Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) z Complements to 2SB1188 2. COLLECTOR 3. EMITTER ℃ unless otherwise noted) MAXIMUM RATINGS (T =25 a Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 1 μA Emitter cut-off current IEBO VEB=4V, IC=0 1 μA DC current gain hFE(1) VCE=3V, IC=500mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance 82 390 IC=2A, IB=0.2A 0.8 V VCE=5V, IC=50mA, f=100MHz 100 MHz VCB=10V, IE=0, f=1MHz 30 pF CLASSIFICATION OF hFE(1) Rank Range Marking www.cj-elec.com P Q R 82-180 120-270 180-390 DBP DBQ DBR 1 C,Nov,2015 Typical Characteristics Static Characteristic 700 COMMON EMITTER Ta=25℃ —— Ta=100℃ 2.0mA 1.8mA IC 500 400 1.4mA 1.2mA 300 1.0mA 0.8mA 200 Ta=25℃ DC CURRENT GAIN 1.6mA COLLECTOR CURRENT IC hFE 600 (mA) hFE 1000 0.6mA 100 0.4mA 100 COMMON EMITTER VCE= 3V IB=0.2mA 0 10 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 5 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 600 Ta=100 ℃ 400 200 1 10 100 COLLECTOR CURREMT VBE —— IC Ta=25℃ 10 1 IC fT 1000 (MHz) TRANSITION FREQUENCY T =2 5℃ a T =1 00℃ a 1 0.3 0.6 0.9 IC Ta=25℃ 100 10 1.2 5 10 COLLECTOR CURRENT Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ Cib 100 C PC 600 f=1MHz IE=0/IC=0 (pF) —— (mA) COMMON EMITTER VCE=5V BASE-EMMITER VOLTAGE VBE (V) CAPACITANCE 1000 2000 100 IC fT (mA) IC 10 Cob 10 —— IC 100 40 (mA) Ta 400 200 0 1 REVERSE VOLTAGE www.cj-elec.com 10 COLLECTOR CURREMT (mA) 100 COLLECTOR CURRENT Ta=100 ℃ 1 0.1 COMMON EMITTER VCE=3V 1 0.1 2000 IC 100 1000 2000 2000 1000 1000 (mA) β=10 Ta=25℃ 0.1 0.0 —— IC 300 800 1000 100 VCEsat IC β=10 0 0.1 10 COLLECTOR CURRENT VCE (V) 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃ ) C,Nov,2015 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout www.cj-elec.com 3 C,Nov,2015 SOT-89-3L Tape and Reel www.cj-elec.com 4 C,Nov,2015