JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
BC846
BC847
BC848
TRANSISTOR (NPN)
SOT-23
1. BASE
2. EMITTER
FEATURES
z
Ideally suited for automatic insertion
z
For switching and AF amplifier applications
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
Collector-Base Voltage
V
BC846
BC847
BC848
VCEO
Unit
80
50
30
Collector-Emitter Voltage
V
BC846
BC847
BC848
65
45
30
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current –Continuous
0.1
A
PC
Collector Power Dissipation
200
mW
150
℃
TJ
Junction Temperature
Tstg
Storage Temperature
-55~+150
℃
DEVICE MARKING
BC846A=1A; BC846B=1B;
BC847A=1E; BC847B=1F; BC847C=1G;
BC848A=1J; BC848B=1K: BC848C=1L
C,Jan,2014
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Collector-base breakdown voltage
T est conditions
BC846
BC847
Collector-emitter breakdown voltage
VCBO
IC= 10µA, IE=0
30
BC846
65
VCEO
IC= 10mA, IB=0
BC848
Emitter-base breakdown voltage
Collector cut-off current
VEBO
IE= 10µA, IC=0
ICBO
VCB=50 V , IE=0
BC848
VCB=30 V , IE=0
VCE=60 V , IB=0
ICEO
BC848
Emitter cut-off current
DC current gain
V
6
VEB=5 V , IC=0
BC846A,847A,848A
hFE
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Collector output capacitance
45
VCE=45 V , IB=0
VCE= 5V, IC= 2mA
BC847C,BC848C
Transition frequency
V
V
0.1
μA
0.1
μA
0.1
μA
VCE=30 V , IB=0
IEBO
BC846B,847B,848B
Unit
VCB=70 V , IE=0
BC846
BC847
Max
30
BC846
BC847
Typ
50
BC848
BC847
Collector cut-off current
Min
80
fT
Cob
110
220
200
450
420
800
IC=100mA, IB= 5mA
0.5
V
IC=100mA, IB= 5mA
1.1
V
VCE= 5 V, IC= 10mA
f=100MHz
VCB=10V,f=1MHz
100
MHz
4.5
pF
C,Jan,2014
Typical Characteristics
BC846/BC847/BC848
Static Characteristic
(mA)
10
COMMON
EMITTER
Ta=25℃
8
——
IC
COMMON EMITTER
VCE= 5V
1000
DC CURRENT GAIN
IC
18uA
16uA
6
14uA
12uA
4
Ta=100℃
hFE
20uA
COLLECTOR CURRENT
hFE
3000
10uA
8uA
Ta=25℃
100
6uA
2
4uA
IB=2uA
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1000
6
10
7
1
VCEsat
IC
——
IC
100
(mA)
IC
500
β=20
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=20
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
10
COLLECTOR CURRENT
VCE (V)
800
Ta=25℃
600
Ta=100 ℃
400
200
0.1
1
10
COLLECTOR CURREMT
IC
100
——
IC
Ta=100 ℃
100
Ta=25℃
10
0.1
100
1
10
COLLECTOR CURREMT
(mA)
VBE
fT
500
100
(mA)
IC
T =2
5℃
a
TRANSITION FREQUENCY
10
T =1
00℃
a
COLLECTOR CURRENT
IC
fT
(mA)
(MHz)
COMMON EMITTER
VCE=5V
——
IC
1
100
COMMON EMITTER
VCE=5V
Ta=25℃
0.1
0.2
0.4
0.6
0.8
10
0.25
1.0
2
100
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Cib
CAPACITANCE
C
(pF)
Ta=25 ℃
Cob
1
0.1
0.1
6
PC
250
f=1MHz
IE=0/IC=0
10
4
8
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (V)
——
IC
10
12
125
150
(mA)
Ta
200
150
100
50
0
1
REVERSE VOLTAGE
10
V
(V)
30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
(℃ )
C,Jan,2014
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