JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-220AK Plastic-Encapsulate Thyristors
BTA08
3Q TRIACs
MAIN CHARACTERISTICS
8A
IT(RMS)
VDRM/VRRM
BTA08-600(T/S/C)W
600V
BTA0 8-800(T/S/C)W
800V
1.55V
VTM
TO-220AK
1.MAIN TERMINAL 1
2.MAIN TERMINAL 2
3.GATE
FEATURES
NPNPN 5-layer Structure TRIACs
Mesa Glass Passivated Technology
Multi Layers Metal Electrodes
High Junction Temperature
Good Commutation Performance
High dV/dt and dI/dt
Insulating Voltage=2500V(RMS)
MARKING
APPLICATIONS
BTA08:Series Code
Heater Control
600CW:Depends on VDRM
Motor Speed Controller
and IGT
Mixer
XXX:Internal Code
ABSOLUTE RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Test condition
Value
Unit
BTA08-600(T/S/C)W
600
V
BTA08-800(T/S/C)W
800
V
Repetitive peak offstate voltage
Tj=25℃
IT(RMS)
RMS on-state current
TO-220AK(TC≤100℃),Fig. 1,2
8
A
ITSM
Non repetitive surge
peak on-state current
Full sine wave ,Tj(init)=25℃,
tp=20ms; Fig. 3,5
80
A
I2t value
tp=10ms
36
A2s
Critical rate of rise of
on-state current
IG=2*IGT, tr≤10ns, F=120HZ,
Tj=125℃
Peak gate current
tp=20µs, Tj=125℃
4
A
PG(AV)
Average gate power
Tj=125℃
1
W
TSTG
Storage temperature
-40~+150
Operating junction
temperature
-40~+125
VDRM/ VRRM
I2t
dIT/dt
IGM
Tj
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1
Ⅰ-Ⅱ-Ⅲ
50
A/μs
℃
Rev. - 1.0
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Test condition
Value
Unit
Symbol
Parameter
IGT
Gate trigger current
VD=12V,
RL=30Ω,
Ⅰ-Ⅱ-Ⅲ
VGT
Gate trigger voltage
Tj=25℃,
Fig. 6
Ⅰ-Ⅱ-Ⅲ
≤1.3
V
VGD
Non-triggering gate
voltage
VD=VDRM, Tj=125℃
≥0.2
V
IH
Holding current
IT=100mA,Fig. 6
IL
Latching current
dVD/dt
VTM
IDRM / IRRM
TW
SW
CW
≤5
≤10
≤35
mA
≤10
≤15
≤35
mA
Ⅰ-Ⅲ
≤10
≤25
≤50
mA
Ⅱ
≤15
≤30
≤60
mA
Critical rate of rise
of off-state
VD=67%VDRM, Gate
Open Tj=125℃
≥20
≥40
≥400
V/μs
On-state Voltage
ITM=11A ,
tp=380μs ,
Fig. 4
Repetitive peak offstate current
IG=1.2IGT,
Fig. 6
≤1.55
V
VD=VDRM/VRRM, Tj=25℃
≤5
≤5
≤5
μA
VD=VDRM/VRRM,Tj=125℃
≤1.0
≤1.0
≤1.0
mA
Value
Unit
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-c)
Junction to case (AC)
TO-220AK
2.5
℃/W
Rth (j-a)
Junction to ambient
TO-220AK
60
℃/W
PART NUMBER
BT A
08
-600
C W
3 Quadrant
TRIACs
A:insulation
T:IGT1-3≤5mA
S:IGT1-3≤10mA
C:IGT1-3≤35mA
IT(RMS)=8A
Repetitive peak off-state voltage
600:≥ 600V
800:≥ 800V
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2
Rev. - 1.0
CHARACTERISTICS CURVES
FIG.2: RMS on-state current versus case temperature
(full cycle)
10
I T(RMS) (A)
P(W)
FIG.1: Maximum power dissipation versus RMS
on-state current (full cycle)
8
9
8
7
6
6
5
4
4
3
2
2
1
0
0
2
4
6
0
-50
8
I T(RMS) (A)
0
100
Tc
150
)
FIG.4: On-state characteristics (maximum values)
90
I TM (A)
I TMS (A)
FIG.3: Surge peak on-state current versus number of cycles
50
100
80
Tj=125ºC
70
60
50
10
40
30
Tj=25ºC
20
10
1
1
10
100
1000
Number of cycles
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V TM (V)
FIG.6: Relative variations of gate trigger current, holding
current and latching current versus junction
temperature (typical values)
)
100
I TMS (A)
1000
I GT,I H,I L(T) / I GT,I H,I L(T=25
FIG.5: Non-repetitive surge peak on-state current for
a sinusoidal pulse with width tp < 10ms
2.5
2.0
IGT
1.5
1.0
IH&IL
10
0.5
0.0
-40
1
0.01
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0.1
1
10
tp(ms)
-20
0
20
40
60
80
100
120
140
Tj
3
)
Rev. - 1.0
Dimensions In Millimeters
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Dimensions In Inches
Symbol
Min
Max
Min
Max
A
9.8
10.4
0.385
0.409
B
2.65
3.1
0.104
0.122
C
2.8
4.2
0.110
0.165
D
0.7
0.92
0.027
0.036
E
3.75
3.95
0.147
0.155
F
14.8
16.1
0.582
0.633
G
13.05
13.6
0.513
0.535
H
2.4
2.7
0.094
0.106
I
4.38
4.61
0.172
0.181
J
1.15
1.36
0.045
0.053
K
5.85
6.82
0.230
0.268
L
2.35
2.75
0.092
0.108
M
0.35
0.65
0.013
0.025
N
1.18
1.42
0.046
0.055
4
Rev. - 1.0
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