BZT52C8V2S

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BZT52C2V4S-BZT52CS ZENER DIODE SOD-323 FEATURES z Planar die construction z 200mW power dissipation on ceramic PBC z General purpose, medium current z Ideally suited for automated assembly processes z Available in lead free version Marking: XX = Device code, see table on page2 the marking code The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device . Maximum Ratings (Ta=25℃ unless otherwise specified ) Characteristic Forward Voltage (Note 2) @ IF = 10mA Power Dissipation(Note 1) Thermal Resistance from Junction to Ambient Operation Junction and Storage Temperature Range www.jscj-elec.com Symbol Value Unit VF 0.9 V PD 200 mW RθJA TJ,Tstg 625 ℃/W ℃ 1 -55~+150 Rev. - 2.0 ELECTRICAL CHARACTERISTICS Ta=25℃ unless otherwise specified Maximum Typical Maximum Zener Impedance Reverse Temperature (Note 3) Current Coefficient (Note 2) @IZTC mV/℃ Test Zener Voltage Range (Note 2) TYPE Current IZTC Marking VZ@IZT IZT Nom(V) Min(V) Max(V) (mA) ZZT@IZT ZZK@IZK Ω IZK IR VR (mA) μA V Min Max mA BZT52C2V4S WX 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7S W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0S W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3S W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6S W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9S W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3S W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7S W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1S W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6S W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2 2.5 5 BZT52C6V2S WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8S WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52C7V5S WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52C8V2S WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1S WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10S WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11S WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12S WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13S WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15S WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13 5 BZT52C16S WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14 5 BZT52C18S WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16 5 BZT52C20S WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22S WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24S WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27S WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30S WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33S WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36S WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39S WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43S WU 43 40. 0 46.0 2 100 700 1 0.1 32 10 12 5 Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 . 2. Short duration test pulse used to minimize self-heating effect. 3. f = 1kHz. www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Zener Characteristics(VZ Up to 10 V) Zener Characteristics(11 V to 43 V) 100 100 0.5 1 2 3 4 5 6 7 8 9 10 0.5 10 11 15 20 43 36 39 40 45 50 Typical Leakage Current 100 Pulsed FOR BZT52CXXXS SERIES 10 IR, LEAKAGE CURRENT (uA) 30 25 20 VZ @ IZT 15 10 5 1 0.1 0.01 Ta=100℃ 1E-3 0 Ta=25℃ 0 4 8 12 16 20 24 28 32 36 40 1E-4 44 0 5 VZ, NOMINAL ZENER VOLTAGE (V) 10 15 25 20 30 35 40 45 VZ, NOMINAL ZENER VOLTAGE (V) Effect of Zener Voltage on Zener Impedance Typical Capacitance 1000 1000 Ta=25℃ Ta=25℃ f=1MHz ZZT, DYNAMIC IMPEDANCE(Ω) 100 1V BIAS BIAS AT 50% OF VZ NOM 10 1 10 IZ(AC)=0.1IZ(DC) IZ=1mA 0V BIAS 1 35 30 TYPICAL Ta VALUES 35 -5 25 VZ, ZENER VOLTAGE (V) Temperature Coefficients 40 C, CAPACITANCE (pF) 33 30 24 27 1 VZ, ZENER VOLTAGE (V) θVZ, TEMPERATURE COEFFICIENT (mV/℃) 20 22 10 18 10 9.1 8.2 6.8 7.5 6.2 5.1 5.6 4.3 1 PD =200mW 11 12 13 IZ, ZENER CURRENT (mA) Pulsed 10 2.4 IZ, ZENER CURRENT (mA) Ta =25℃ PD =200mW Pulsed 15 16 Ta =25℃ 100 IZ=5mA 10 1 100 VZ, NOMINAL ZENER VOLTAGE (V) f=1kHz 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Power Derating Curve 200 POWER DISSIPATION PD (mW) 250 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 125 150 (℃ ) 3 Rev. - 2.0 SOD-323 Package Outline Dimensions SOD-323 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 SOD-323 Tape and Reel www.jscj-elec.com 5 Rev. - 2.0