JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2305A
P-Channel MOSFET
V(BR)DSS
ID
RDS(on)MAX
50mΩ@-4.5V
65mΩ@-2.5V
-12 V
SOT-23
-4.1A
120mΩ@-1.8V
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
Load Switch for Portable Devices
z
DC/DC Converter
z
FEATURE
z TrenchFET Power MOSFET
Equivalent Circuit
MARKING
S5A4'(
!45$,
, 2n(
# ,,!",$
(
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
-12
Gate-Source Voltage
VGS
±8
Continuous Drain Current
ID
-4.1
Continuous Source-Drain Diode Current
IS
-0.8
Maximum Power Dissipationd
PD
1.3
W
RθJA
96.2
℃/W
TJ,TSTG
-50 ~+150
℃
Thermal Resistance from Junction to Ambient
Operation Junction and Storage Temperature Range
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1
V
A
Rev. - 1.2
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static
Drain-source breakdown voltage
Gate-source threshold voltage
V(BR)DSS
VGS = 0V, ID =-250µA
-12
VGS(th)
VDS =VGS, ID =-250µA
-0.5
V
-1
Gate-source leakage
IGSS
VDS =0V, VGS =±8V
±100
nA
Zero gate voltage drain current
IDSS
VDS =-8V, VGS =0V
-1
µA
a
Drain-source on-state resistance
Forward transconductance
a
RDS(on)
gfs
VGS =-4.5V, ID =-3.5A
40
50
VGS =-2.5V, ID =-3A
55
65
VGS =-1.8V,ID=-2.0A
90
120
VDS =-5V, ID =-4.1A
6
mΩ
S
Dynamic
b,c
Input capacitance
Ciss
b,c
Output capacitance
Reverse transfer capacitance
Coss
b,c
740
VDS =-4V,VGS =0V,f =1MHz
190
Crss
VDS =-4V,VGS =-4.5V,
Total gate charge
b
Qg
b
Gate-source charge
b
Gate-drain charge
Qgs
ID =-4.1A
VDS =-4V,VGS =-2.5V,
Gate resistance
Rg
b,c
Turn-on delay time
b,c
Rise time
15
4.5
9
nC
7
14
Ω
13
20
35
53
32
48
1.6
f =1MHz
1.4
td(on)
tr
b,c
7.8
1.2
ID =-4.1A
Qgd
b,c
pF
290
VDD=-4V,
RL=1.2Ω, ID ≈-3.3A,
Turn-off Delay time
td(off)
b,c
tf
10
20
td(on)
5
10
11
17
22
33
16
24
Fall time
b,c
Turn-on delay time
b,c
Rise time
tr
b,c
Turn-off delay time
td(off)
b,c
tf
Fall time
VGEN=-4.5V,Rg=1Ω
VDD=-4V,
RL=1.2Ω, ID ≈-3.3A,
VGEN=-8V,Rg=1Ω
ns
Drain-source body diode characteristics
Continuous source-drain diode current
IS
Pulse diode forward currenta
ISM
Body ciode voltage
VSD
TC=25℃
-1.4
A
-10
IF=-3.3A
-1.2
V
Note :
a. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
b. Guaranteed by design, not subject to production testing.
c. These parameters have no way to verify.
d. Device mounted on 1"×1" FR-4 PCB with high coverage 2oz Copper ,double sided. Copper, t≤10s.
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2
Rev. - 1.2
Typical Characteristics
Transfer Characteristics
Output Characteristics
-16
-16
Ta=25℃
Pulsed
VDS= -5A
Pulsed
(A)
(A)
VGS=5V,4V,3V,2.5V
Ta=25℃
Ta=125℃
-12
ID
DRAIN CURRENT
DRAIN CURRENT
ID
-12
VGS=2.0V
-8
-4
-8
-4
VGS=1.5V
-0
-0
-1
-2
-3
DRAIN TO SOURCE VOLTAGE
-4
VDS
-0
-0.5
-5
(V)
-1.0
-1.5
-2.0
-2.5
GATE TO SOURCE VOLTAGE
VGS
RDS(ON)—— VGS
RDS(ON) —— ID
150
150
Ta=25℃
Pulsed
RDS(ON)
(m)
ID=-3.5A
Pulsed
(m)
100
VGS= 1.8V
ON-RESISTANCE
RDS(ON)
ON-RESISTANCE
-3.0
(V)
VGS= 2.5V
50
100
TJ=125℃
50
TJ=25℃
VGS= 4.5V
0
-0
-1
-2
DRAIN CURRENT
-3
ID
-4
0
-1
-5
-2
(A)
-3
-4
GATE TO SOURCE VOLTAGE
IS —— VSD
VGS
-5
(V)
Threshold Voltage
-2
-1.2
ID=250uA
Pulsed
VTH
Ta=125℃
Ta=25℃
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
-1
-0.1
-0.01
-0.1
-1
SOURCE TO DRAIN VOLTAGE
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-0.8
-0.4
-0.0
25
2
VSD (V)
50
75
JUNCTION TEMPERATURE
3
100
TJ
125
(℃ )
Rev. - 1.2
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
SOT-23 Suggested Pad Layout
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
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4
Rev. - 1.2
SOT-23 Tape and Reel
30,000
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120,000
5
Rev. - 1.2