CJ2312

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2312 N-Channel 20-V(D-S) MOSFET SOT-23 APPLICATIONS z DC/DC Converters z Load Switching for Portable Applications 1. GATE 2. SOURCE 3. DRAIN MARKING: S12 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8.0 ID 5 Pulsed Drain Current IDM 20 Continuous Source-Drain Diode Current IS 1.04 PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 Continuous Drain Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient t=5s t=5s V A ℃ B,Dec,2011 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =20V, VGS =0V 1.0 µA Gate-source threshold voltage VGS(th) 1.0 V a Drain-source on-state resistance RDS(on) a Forward tranconductance gfS VDS =VGS, ID =250µA 20 V 0.45 VGS =4.5V, ID =5.0A 0.0318 VGS =2.5V, ID =4.7A 0.0356 VGS =1.8V, ID =4.3A 0.0414 VDS =10V, ID =5.0A 6 Ω S b Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Turn-on delay Time VDS =10V,VGS =0V,f =1MHz tr td(off) Fall yime pF 105 55 f =1MHz 0.5 4.8 td(on) Rise time Turn-off Delay time 865 Ω 10 VGEN=5V,VDD=10V, 20 ID =4A,RG=1Ω, RL=2.2Ω 32 tf ns 12 Drain-source body diode characteristics Forward diode voltage VSD VGS =0V,IS=4A 0.75 1.2 V Notes : a. Pulse Test : pulse width ≤300µs, duty cycle ≤2%. b. These parameters have no way to verify. B,Dec,2011 CJ2312 Typical Characteristics Transfer Characteristics Output Characteristics 16 10 o Ta=25 C VGS=2 thru 4.5 (A) ID 6 VGS=1.5V DRAIN CURRENT DRAIN CURRENT ID (A) 8 12 8 4 4 2 VGS=1V o 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE IS —— VDS 0 0.4 5 (V) Ta=25 C 0.6 0.8 1.0 1.2 1.4 GATE TO SOURCE VOLTAGE RDS(ON) —— VSD 1.6 VGS VGS 100 20 o Ta=25 C (mΩ) RDS(ON) 1 ON-RESISTANCE IS (A) 10 SOURCE CURRENT 1.8 (V) 0.1 0.01 80 60 40 ID=3.0A 20 o Ta=25 C 1E-3 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE RDS(ON) —— 1.0 1.2 0 2 4 GATE TO SOURCE VOLTAGE VSD (V) 6 VGS 8 (V) ID 60 o ON-RESISTANCE RDS(ON) (mΩ) Ta=25 C 50 40 VGS=1.8V 30 VGS=2.5V 20 VGS=4.5V 10 0 2 4 6 8 DRAIN CURRENT 10 ID 12 14 16 (A) B,Dec,2011