CJBA3541K

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006-3L Plastic-Encapsulate MOSFETs CJBA3541K N-Channel MOSFET V(BR)DSS 30V  ID RDS(on)MAX 500mΩ@4.5V DFN1006-3L 0.6A  600mΩ@2.5V FEATURE APPLICATION z Lead Free Product is Acquired z Surface Mount Package z N-Channel Switch with Low RDS(on) z Load/ Power Switching z Interfacing Switching z Battery Management for Ultra Small z Operated at Low Logic Level Gate Drive z ESD Protected Gate Portable Electronics z Logic Level Shift MARKING: Equivalent Circuit 35 ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit Drain-Source Voltage VDS 30 V Typical Gate-Source Voltage VGS ±12 V Continuous Drain Current (note 1) ID 0.6 A Pulsed Drain Current (tp=10us) IDM 1.8 A Power Dissipation (note 1) PD 100 mW RθJA 1250 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ 150 ℃ TL 260 ℃ Thermal Resistance from Junction to Ambient (note 1) Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta=25℃ unless otherwise noted Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =30V,VGS = 0V Gate-body leakage current IGSS VGS =±10V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage (2) Drain-source on-resistance (2) Forward tranconductance Dynamic characteristics RDS(on) gFS Ciss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Turn-on rise time 1 µA ±20 µA 1.0 1.5 V VGS =4.5V, ID =600mA 320 500 VGS =2.5V, ID =300mA 410 600 VDS =10V, ID =150mA 0.8 150 mΩ mS 44 120 15 20 Crss 8 15 td(on) 5.0 VDS=16V,VGS=0V,f=1MHz pF (4) (3) (3) Turn-off delay time V (4) Input Capacitance Turn-on delay time 30 tr (3) td(off) (3) Turn-off fall time VDS=10V,ID=500mA, 8.2 VGS=4.5V,RG=10Ω 23 tf ns 41 Source-Drain Diode characteristics Diode Forward voltage (3) VDS IS=0.15A, VGS = 0V 1.2 V Notes: 1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse Width=300μs, Duty Cycle=2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Guaranteed by design, not subject to producting. www.jscj-elec.com 2 Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV Transfer Characteristics Output Characteristics Drain Current ID(A) 1.6 VGS=2.5V VGS=5V VGS=3V 1.8 Ta=25℃ VDS=3V Plused VGS=2V VGS=4V 1.2 VGS=1.5V 0.8 Plused 1.5 Drain Current ID(A) 2.0 0.4 Ta=25℃ 1.2 0.9 0.6 0.3 0.0 0.0 0.4 0.8 1.2 1.6 0.0 0.0 2.0 Drain to Source Voltage VDS(V) 0.8 0.6 1.2 1.8 2.4 RDS(ON)——ID RDS(ON)——VGS 2.0 Ta=25℃ ID=650mA Plused 0.6 0.4 On-Resistancer RDSON(Ω) On-Resistancer RDSON(Ω) Plused VGS=2.5V VGS=4.5V 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 1.5 1.0 Ta=25℃ 0.5 0.0 3.0 1 Drain Current ID(A) 2 3 Threshold Voltage Ta=125℃ Threshold Voltage VTH(V) Source Current IS(A) 0.1 Ta=25℃ 0.01 0.4 0.6 0.8 1.0 0.7 ID=250uA 0.6 0.5 25 1.2 Source to Drain Voltage VSD(V) www.jscj-elec.com 5 0.8 Plused 0.2 4 Gate to Source Voltage VGS(V) IS——VSD 1 3.0 Gate to Source Voltage VGS(V) 50 75 100 125 Juction Temperature TJ(℃) 3 Rev. - 1.0 DFN1006-3L Package Outline Dimensions NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0