CJBA3139K

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006-3L Plastic-Encapsulate MOSFETs CJBA3139K P-Channel MOSFET V(BR)DSS RDS(on)MAX ID DFN1006-3L 520mΩ@-4.5V -20V  -0.66A  780mΩ@-2.5V 950mΩ(TYP)@-1.8V FEATURE APPLICATION z Lead Free Product is Acquired z Surface Mount Package z P-Channel Switch with Low RDS(on) z Load/ Power Switching z Interfacing Switching z Battery Management for Ultra Small z Operated at Low Logic Level Gate Drive z ESD Protected Gate Portable Electronics z Logic Level Shift MARKING: Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit Drain-Source Voltage VDS -20 V Typical Gate-Source Voltage VGS ±12 V Continuous Drain Current (note 1) ID -0.66 A Pulsed Drain Current (tp=10us) IDM -1.2 A Power Dissipation (note 1) PD 100 mW RθJA 1250 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ 150 ℃ TL 260 ℃ Thermal Resistance from Junction to Ambient (note 1) Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta=25℃ unless otherwise noted Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID = -250µA Zero gate voltage drain current IDSS VDS =-20V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±20 uA VGS(th) VDS =VGS, ID =-250µA -0.61 -1.1 V VGS =-4.5V, ID = -1A 450 520 mΩ VGS =-2.5V, ID = -0.8A 650 780 mΩ VGS =-1.8V, ID =-0.5A 950 mΩ 1.2 S Gate threshold voltage (note 2) Drain-source on-resistance(note 2) RDS(on) Forward tranconductance(note 2) gFS VDS =-10V, ID =-0.54A Diode forward voltage VSD IS=-0.5A, VGS = 0V -20 -0.35 V -1.2 V DYNAMIC PARAMETERS(note 4) 113 pF 15 pF Crss 9 pF td(on) 9 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VDS =-16V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 4) Turn-on delay time (note 3) Turn-on rise time (note 3) Turn-off delay time (note 3) Turn-off fall time (note 3) tr VDD=-4.5V,VGS=-10V, 5.7 ns td(off) ID=-200mA,RGEN=10Ω 32.6 ns 20.3 ns tf Notes: 1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse Width=300μs, Duty Cycle=2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Guaranteed by design, not subject to producting. www.jscj-elec.com 2 Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV Output Characteristics Transfer Characteristics -3.0 -2.0 Ta=25℃ Plused -1.6 Ta=25℃ VGS=-2 .5V -2.0 Drain Current ID(A) Drain Current I D(A) -2.5 VDS=3V VGS=-3 .1V,-4.5V,-6V Plused VGS=-1 .8V -1.5 -1.0 Ta=125℃ -1.2 -0.8 VGS=-1 .5V -0.4 -0.5 0.0 0.0 0.0 0 -1 -2 -3 -4 -5 -0.5 -1.0 -1.5 -2.5 -3.0 -3.5 -4.0 RDS(ON)-VGS RDS(ON)-ID 2.0 -1.5 ID=-0.5A Ta=25℃ Plused Plused 1.6 -0.9 On-Resistancer R DSON (Ω) -1.2 On-Resistancer RDSON(Ω) -2.0 Gate to Source Voltage V GS(V) Drain to Source Voltage VDS(V) VGS=-1.8V VGS=-2.5V -0.6 VGS=-4.5V -0.3 0.0 0.0 -0.3 -0.6 -0.9 1.2 Ta=125℃ 0.8 Ta=25℃ 0.4 -1.2 0.0 -1.5 0 -1 -2 Drain Current ID(A) -3 -4 -5 Gate to Source Voltage VGS(V) IS-VSD Threshold Voltage -0.8 -1 Plused Threshold Voltage VTH(V) Source Current IS(A) -0.7 - 0.1 Ta=125℃ Ta=25℃ - 0.01 - 1E-3 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 ID=250uA -0.5 -0.4 -0.3 25 -1.4 50 75 100 125 Juction Temperature TJ(℃) Source to Drain Voltage V SD(V) www.jscj-elec.com -0.6 3 Rev. - 1.0 DFN1006-3L Package Outline Dimensions NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0