MMBT589

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT589 TRANSISTOR (PNP) FEATURES High current surface mount PNP silicon switching transistor for z Load management in portable applications 1. BASE 2. EMITTER 3. COLLECTOR MARKING :589 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 310 mW RθJA Thermal Resistance, junction to Ambient 403 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 μA Collector-emitter cut-off current ICES VCES=-30V -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA hFE1 VCE=-2V,IC=-1mA 100 hFE2 VCE=-2V,IC=-500mA 100 hFE3 VCE=-2V,IC=-1A 80 hFE4 VCE=-2V,IC=-2A 40 DC current gain 300 VCE(sat)1 IC= -500mA, IB=-50mA -0.25 V VCE(sat)2 IC= -1A, IB=-100mA -0.3 V VCE(sat)3 IC= -2A, IB=-200mA -0.65 V Base-emitter saturation voltage VBE(sat) IC= -1A, IB=-100mA -1.2 V Base-emitter Turn-on voltage VBE(on) VCE=-2V, IC=-1A -1.1 V Collector-emitter saturation voltage Transition frequency Collector Output Capacitance www.cj-elec.com fT Cob VCE=-5V, IC=-100mA , f =100MHz f=1MHz 1 100 MHz 15 pF C,Jun,2015 A,Jun,2014 Typical Characteristics Static Characteristic hFE -1200 COMMON EMITTER Ta=25℃ -3.6mA -3.2mA -2.8mA hFE (mA) Ta=100℃ DC CURRENT GAIN -2.4mA -800 IC IC -4mA -1000 -2mA COLLECTOR CURRENT —— 1000 -600 -1.6mA -1.2mA -400 Ta=25℃ 100 -0.8mA -200 COMMON EMITTER VCE= -2V IB=-0.4mA -0 -0 -1 -2 -3 -4 COLLECTOR-EMITTER VOLTAGE VCEsat —— -5 10 -0.1 -6 -10 -100 COLLECTOR CURRENT IC VBEsat —— IC -1000 (mA) IC -1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1 VCE (V) -100 Ta=100 ℃ -10 Ta=25℃ -800 Ta=25℃ -600 Ta=100 ℃ -400 -200 β=10 β=10 -1 -0 -1 -10 -100 COLLECTOR CURRENT IC IC -1 (mA) -100 COLLECTOR CURREMT fT —— IC -1000 (mA) IC (MHz) 200 100 fT -100 TRANSITION FREQUENCY 0℃ T = a 10 ℃ -10 T = a 25 COLLECTOR CURRENT -10 VBE IC (mA) -1000 —— -1000 -1 COMMON EMITTER VCE= -2V -0.1 -200 COMMON EMITTER VCE=-5V Ta=25℃ 10 -400 -600 -800 -3 -1000 -10 BASE-EMMITER VOLTAGE VBE (mV) 1000 Cob/Cib —— VCB/VEB -100 COLLECTOR CURRENT IC Pc Ta 500 —— (mA) f=1MHz IC=0/IE=0 CAPACITANCE COLLECTOR POWER DISSIPATION Pc (mW) 100 Cib CT (pF) Ta=25 ℃ Cob 10 1 -0.1 -1 COLLECTOR-BASE VOLTAGE www.cj-elec.com -10 VCB/VEB 400 300 200 100 0 -20 0 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃ ) C,Jun,2015 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 6° SOT-23 Suggested Pad Layout www.cj-elec.com 3 C,Jun,2015 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 C,Jun,2015 A,Jun,2014