MMBT589LT1G_09

MMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 30 VOLTS, 2.0 AMPS PNP TRANSISTORS COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Collector Current − Peak Symbol VCEO VCBO VEBO IC ICM Value −30 −50 −5.0 −1.0 −2.0 Unit Vdc Vdc Vdc Adc A 1 Symbol PD Max 310 2.5 403 Unit mW mW/°C °C/W 2 3 SOT−23 (TO−236) CASE 318 STYLE 6 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Total Device Dissipation (Ref. Figure 8) (Single Pulse < 10 sec.) Junction and Storage Temperature RqJA PD MARKING DIAGRAM G3 M G G 1 G3 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. 710 5.7 176 mW mW/°C °C/W RqJA PDsingle TJ, Tstg 575 −55 to +150 mW °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 4 @ Minimum Pad 2. FR− 4 @ 1.0 X 1.0 inch Pad ORDERING INFORMATION Device MMBT589LT1G Package Shipping† SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 5 1 Publication Order Number: MMBT589LT1/D MMBT589LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = −30 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCES = −30 Vdc) Emitter Cutoff Current (VEB = −4.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (Figure 1) (IC = −1.0 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = 2.0 A, VCE = −2.0 V) Collector − Emitter Saturation Voltage (Note 3) (Figure 3) (IC = −0.5 A, IB = −0.05 A) (IC = −1.0 A, IB = 0.1 A) (IC = −2.0 A, IB = −0.2 A) Base − Emitter Saturation Voltage (Note 3) (Figure 2) (IC = −1.0 A, IB = −0.1 A) Base − Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −2.0 V) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) Output Capacitance (f = 1.0 MHz) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% hFE 100 100 80 40 − − − − − 100 − − 300 − − −0.25 −0.30 −0.65 −1.2 −1.1 − 15 − V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO −30 −50 −5.0 − − − − − − −0.1 −0.1 −0.1 Vdc Vdc Vdc mAdc mAdc mAdc Symbol Min Max Unit VCE(sat) V VBE(sat) VBE(on) fT Cobo V V MHz pF http://onsemi.com 2 MMBT589LT1G 200 VCE = -2.0 V h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 150 230 210 190 170 150 130 110 90 70 0 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 50 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) -55°C 25°C 125°C VCE = -1.0 V 100 50 Figure 1. DC Current Gain versus Collector Current Figure 2. DC Current Gain versus Collector Current 1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) VCE(sat) VBE(sat) VBE(on) 1.0 0.95 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC/IB = 100 IC/IB = 10 Figure 3. “On” Voltages Figure 4. Base Emitter Saturation Voltage versus Collector Current VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 1.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC/IB = 10 IC/IB = 100 0.8 0.6 1000 mA 0.4 100 mA 0.2 10 mA 0 0.01 0.1 1.0 10 100 IB, BASE CURRENT (mA) 50 mA 1000 Figure 5. Collector Emitter Saturation Voltage versus Collector Current Figure 6. Collector Emitter Saturation Voltage versus Collector Current http://onsemi.com 3 MMBT589LT1G 10 IC , COLLECTOR CURRENT (AMPS) SINGLE PULSE TEST AT Tamb = 25°C 100 ms 1s 1.0 100 ms 10 ms 1 ms 2s 0.1 0.01 0.1 1.0 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 100 Figure 7. Safe Operating Area 0.5 1.0E+00 0.05 0.02 1.0E-01 Rthja , (t) D = 0.01 0.2 0.1 1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000 Figure 8. Normalized Thermal Response http://onsemi.com 4 MMBT589LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 E 1 2 HE c e b q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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