TIP127

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR 3.EMITTER C NPN FEATURES Medium Power Complementary Silicon Transistors C PNP B B R1 R1 R2 E MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter R2 R 1 typ. =5 KΩ E R 2 typ. =210Ω TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 R 1 typ. =5 KΩ R 2 typ. =210Ω Unit VCBO Collector-Base Voltage 60 80 100 V VCEO Collector-Emitter Voltage 60 80 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 5 A PC Collector Power Dissipation 2 W RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W RθJc Thermal Resistance Junction to Case 1.92 ℃/W TJ,Tstg Operation Junction and Storage Temperature Range -55to+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Output Capacitance www.jscj-elec.com TIP125,TIP126,TIP127 TIP120,TIP121,TIP122 Test conditions V(BR)CBO IC= 1mA,IE=0 VCEO(SUS) IC= 30mA,IB=0 ICBO ICEO Min Max 60 80 100 60 80 100 VCB= 60 V, IE=0 VCB= 80 V, IE=0 VCB= 100V, IE=0 VCE=30 V, IB=0 VCE=40 V, IB=0 VCE=50 V, IB=0 Unit V V 0.2 mA 0.5 mA IEBO VEB=5 V, IC=0 hFE(1) VCE= 3V, IC=0.5A 1000 hFE(2) VCE= 3V, IC=3 A 1000 VCE(sat) IC=3A,IB=12mA IC=5 A,IB=20mA 12000 2 4 VBE VCE=3V, IC=3 A 2.5 V 300 200 pF Cob 1 VCB=10V, IE=0,f=0.1MHz 2 mA V Rev. - 2.0 Typical Characteristics TIP127 hFE —— IC Static Characteristic -6 10000 -5 o -0.8mA -0.7mA COLLECTOR CURRENT DC CURRENT GAIN IC -0.9mA -4 Ta=100 C hFE -1.0mA (A) VCE= -3V COMMON EMITTER Ta=25℃ -0.6mA -3 -0.5mA -2 -0.4mA 1000 o Ta=25 C 100 -0.3mA -1 IB=-0.2mA -0 10 -0 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE -7 VCE -1 -8 VCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=250 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -5000 -1000 IC (mA) IC -1200 -1.8 -1.6 -100 COLLECTOR CURRENT VBEsat —— IC -2.0 -10 (V) Ta=25℃ -1.4 -1.2 -1.0 -0.8 Ta=100℃ -0.6 β=250 -1000 -800 Ta=25℃ -600 -400 Ta=100℃ -0.4 -200 -0.2 -0.0 -0 -1 -10 -1000 -100 COLLECTOR CURRENT IC —— IC -5000 -1 (mA) VBE 250 —— IC (mA) VCB / VEB f=1MHz IE=0 / IC=0 -1000 (pF) o o Ta=25 C 200 Cib C Ta=100 C -100 CAPACITANCE IC (mA) Cob / Cib -5000 -1000 -100 COLLECTOR CURRENT -5000 COLLECTOR CURRENT -10 -10 Ta=25℃ -1 150 Cob 100 50 VCE=-3V -0.1 -0.0 -0.5 -1.5 -1.0 BASE-EMITTER VOLTAGE PC COLLECTOR POWER DISSIPATION PC (mW) 2500 —— 0 -0.1 -2.0 -1 REVERSE VOLTAGE VBE(V) -10 V -20 (V) Ta 2000 1500 1000 500 0 0 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 125 150 (℃ ) 2 Rev. - 2.0 TO-220-3L Package Outline Dimensions Symbol A A1 b b1 c c1 D E E1 e e1 F h L L1 Φ www.jscj-elec.com Dimensions In Millimeters Min Max 4.470 4.670 2.520 2.820 0.710 0.910 1.170 1.370 0.310 0.530 1.170 1.370 10.010 10.310 8.500 8.900 12.060 12.460 2.540 TYP 4.980 5.180 2.590 2.890 0.000 0.300 13.400 13.800 3.560 3.960 3.735 3.935 3 Dimensions In Inches Min Max 0.176 0.184 0.099 0.111 0.028 0.036 0.046 0.054 0.012 0.021 0.046 0.054 0.394 0.406 0.335 0.350 0.475 0.491 0.100 TYP 0.196 0.204 0.102 0.114 0.000 0.012 0.528 0.543 0.140 0.156 0.147 0.155 Rev. - 2.0