JMnic
Product Specification
Silicon NPN Power Transistors
2N6492
DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High DC current gain ・DARLINGTON APPLICATIONS ・General-purpose power amplifier and low frequency swithing applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 55 45 5 15 100 150 -65~200 UNIT V V V A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT ℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tm=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2N6492
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1 A ;IB=0
45
V
VCEsat
Collector-emitter saturation voltage
IC=10A ;IB=100mA
3.0
V
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=100mA
4.0
V
VBE
Base-emitter on voltage
IC=3A ; VCE=4V
2.8
V
ICEO
Collector cut-off current
VCE=40V; IB=0
1.0
mA
ICEX
Collector cut-off current
VCE=55V; VBE(off)=-1.5V
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
hFE-1
DC current gain
IC=3A ; VCE=4V
500
hFE-2
DC current gain
IC=15A ; VCE=4V
100
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6492
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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