SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6492
DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 55 45 5 15 100 150 -65~200 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tm=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2N6492
SYMBOL
MAX
UNIT
VCEO(SUS) VCEsat VBEsat VBE ICEO ICEX IEBO hFE-1 hFE-2
Collector-emitter sustaining voltage
IC=0.1 A ;IB=0 IC=10A ;IB=100mA IC=10A ;IB=100mA IC=3A ; VCE=4V VCE=40V; IB=0 VCE=55V; VBE(off)=-1.5V VEB=5V; IC=0 IC=3A ; VCE=4V IC=15A ; VCE=4V
45
V
Collector-emitter saturation voltage
3.0
V
Base-emitter saturation voltage
4.0
V
Base-emitter on voltage
2.8
V
Collector cut-off current
1.0
mA
Collector cut-off current
0.5
mA
Emitter cut-off current
3.0
mA
DC current gain
500
DC current gain
100
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6492
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
很抱歉,暂时无法提供与“2N6492”相匹配的价格&库存,您可以联系我们找货
免费人工找货