2SA1012

Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features ﹒With TO-220 package ﹒Complementary to 2SC2562 BCE Absolute Maximum Ratings Tc=25 SYMBOL VCBO VCEO VEBO IB IC PC Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature -5 25 150 -55~150 RATING -60 -50 -5 UNIT V V V A A W TO-220 Electrical Characteristics Tc=25 SYMBOL ICBO IEBO ICEO VCBO V(BR)ceo VEBO VCE(sat-1) VCE(sat-2) hFE-1 hFE-2 VBE(sat)1 VBE(sat)2 COB fT PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Base-emitter saturation voltages Base-emitter saturation voltages Collector Output Capacitance Transition frepuency VCB=-10V; IE=0;f=1MHz IC=-1A; VCE=-4V 70 60 pF MHz IC=-1A; VCE=-1V IC=-3A; VCE=-1V IC=-8A; IB=-0.15A 70 30 -0.9 -1.2 V 240 IC=-8A; IB=-0.15A -0.2 -0.4 V IC=-10mA;IB=0 -50 V CONDITIONS VCB=-50V; IE=0 VEB=-5V; IC=0 MIN Typ MAX -1 -1 UNIT uA uA