JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SA1012
TRANSISTOR
72/
(PNP)
FEATURES
z High Current Switching Applications.
z Low Collector Saturation Voltage
z High Speed Swithing Time
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-5
A
PC
Collector Power Dissipation
1.25
W
5ș-$
Thermal Resistance Junction
to Ambient
100
Я /W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~+150
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
Typ
Unit
Collector-base breakdown voltage
V(BR)CBO
IC =-0.1mA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO*
IC =-10mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V, IE=0
-1
μA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-1
μA
hFE(1)
VCE=-1V, IC=-1A
70
hFE(2)*
VCE=-1V, IC=-3A
30
DC current gain
240
Collector-emitter saturation voltage
VCE(sat)*
IC=-3A, IB=-150mA
-0.4
V
Base-emitter saturation voltage
VBE(sat)*
IC=-3A, IB=-150mA
-1.2
V
Transition frequency
fT
Collector output capacitance
Cob
Turn-on Time
ton
Storage Time
ts
Fall Time
tf
VCE=-4V, IC=-1A
60
MHz
VCB=-10V, IE=0, f=1MHz
170
pF
0.1
VCC=-30V,IC=-3A,
IB1=-IB2=-0.15A
μs
1.0
0.1
*Pulse test: tp≤300μs, δ≤0.02.
CLASSIFICATION of hFE((1)
Rank
O
Range
70-140
www.cj-elec.com
Y
120-240
1
E,Mar,2016
Typical Characteristics
Static Characteristic
-1.6
(A)
-10mA
IC
-8mA
DC CURRENT GAIN
COLLECTOR CURRENT
IC
Ta=100℃
hFE
-9mA
-1.0
-7mA
-0.8
——
COMMON
EMITTER
Ta=25℃
-1.4
-1.2
hFE
1000
-6mA
-5mA
-0.6
-4mA
-0.4
Ta=25℃
100
-3mA
-2mA
-0.2
COMMON EMITTER
VCE=-1V
IB=-1mA
10
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
COLLECTOR-EMITTER VOLTAGE
VCEsat
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
-500
——
-1.6
VCE
-1.8
-2.0
-1
-10
-100
IC
VBEsat
-1.2
-100
Ta=25℃
Ta=100℃
-5000
-1000
COLLECTOR CURRENT
(V)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
-0.0
-0.0
IC
(mA)
IC
——
-1.0
-0.8
Ta=25℃
-0.6
Ta=100℃
-0.4
β=20
-10
-10
-1000
COLLECTOR CURRENT
IC
-5000
——
IC
-1
-5000
-100
-1000
COLLECTOR CURRENT
(mA)
VBE
Cob/ Cib
10000
IC
—— VCB/ VEB
(pF)
Ta=25℃
Cib
1000
C
CAPACITANCE
T=
a 25
℃
T=
a 10
0℃
-100
-5000
(mA)
f=1MHz
IE=0/IC=0
(mA)
IC
-10
COMMON EMITTER
VCE=-1V
-1000
COLLCETOR CURRENT
β=20
-0.2
-100
-10
Cob
100
-1
-0.1
-0.2
-0.4
-0.6
-0.8
BASE-EMITTER VOLTAGE
fT
1000
——
-1.0
V BE
10
-0.1
-1.2
-1
-10
REVERSE VOLTAGE
(V)
IC
PC
2000
——
V
-30
(V)
Ta
VCE=-4V
1750
COLLECTOR POWER DISSIPATION
PC (mW)
TRANSITION FREQUENCY
fT
(MHz)
Ta=25℃
100
10
1
-50
1250
1000
750
500
250
0
-100
-1000
COLLECTOR CURRENT
www.cj-elec.com
1500
IC
0
-1500
(mA)
25
50
75
AMBIENT TEMPERATURE
2
100
Ta
125
150
(℃ )
E,Mar,2016
Symbol
A
A1
B
b
c
c1
D
D1
E
e
e1
M
N
L
L1
L2
V
ĭ
www.cj-elec.com
Dimensions In Millimeters
Max.
Min.
2.380
2.200
0.000
0.100
0.800
1.400
0.710
0.810
0.460
0.560
0.460
0.560
6.500
6.700
5.130
5.460
6.000
6.200
2.286 TYP.
4.327
4.727
1.778REF.
0.762REF.
9.800
10.400
2.9REF.
1.400
1.700
4.830 REF.
3
Dimensions In Inches
Min.
Max.
0.087
0.094
0.000
0.004
0.031
0.055
0.028
0.032
0.018
0.022
0.018
0.022
0.256
0.264
0.202
0.215
0.236
0.244
0.090 TYP.
0.170
0.186
0.070REF.
0.018REF.
0.386
0.409
0.114REF.
0.055
0.067
0.190 REF.
E,Mar,2016
To-252(4R)-2L Tape and Reel
www.cj-elec.com
4
E,Mar,2016
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