2SA1491

JMnic Product Specification Silicon PNP Power Transistors 2SA1491 DESCRIPTION ・With TO-3PN package ・Complement to type 2SC3855 APPLICATIONS ・Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -6 -10 -4 100 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors 2SA1491 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -140 V VCEsat ICBO Collector-emitter saturation voltage IC=-5A; IB=-0.5A VCB=-140V; IE=0 -2.0 V μA μA Collector cut-off current -100 IEBO Emitter cut-off current VEB=-6V; IC=0 -100 hFE DC current gain IC=-3A ; VCE=-4V 50 fT Transition frequency IC=0.5A ; VCE=-12V 20 MHz Switching times μs μs μs ton ts Turn-on time IC=-5A;RL=12Ω IB1=- IB2=-0.5A VCC=60V 0.30 Storage time 0.90 tf Fall time 0.20 2 JMnic Product Specification Silicon PNP Power Transistors 2SA1491 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1491 4