2SC3723

JMnic Product Specification Silicon NPN Power Transistors 2SC3723 DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 450 400 10 5 2 40 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT ℃/W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3723 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 450 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.2 V μA μA ICBO Collector cut-off current VCB=450V ;IE=0 100 IEBO Emitter cut-off current VEB=10V; IC=0 100 hFE DC current gain IC=2 A ; VCE=5V 10 Switching times μs μs μs ton Turn-on time IC=4A; IB1=0.8A IB2=-1.6A;RL=37.5Ω 1.0 ts Storage time 2.5 tf Fall time 0.5 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3723 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3723 4