JMnic
Product Specification
Silicon NPN Power Transistors
2SC4804
DESCRIPTION ・With ITO-220 package ・High breakdown voltage APPLICATIONS ・Switching regulator and high voltage switching applications ・High speed DC-DC converter applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 900 600 7 3 5 1 30 150 -55~150 UNIT V V V A A A W ℃ ℃
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4804
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
600
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
900
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=0.8A; IB=0.16A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=0.8A; IB=0.16A
1.2
V
ICBO
Collector cut-off current
VCB=800V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=0.8A ; VCE=5V
10
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4804
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
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