2SC5124

JMnic Product Specification Silicon NPN Power Transistors 2SC5124 DESCRIPTION ・With TO-3PML package ・High voltage switchihg transistor APPLICATIONS ・Display horizontal deflection output ・Switching regulator and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 10 20 5 100 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors 2SC5124 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO1 ICBO2 IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; RBE=∞ IC=8A;IB=2A IC=8A;IB=2A VCB=1200V; IE=0 VCB=1500V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=5V IC=8A ; VCE=5V IE=-1A ; VCE=12V VCB=10V;f=1MHz 8 4 3 130 9 MHz pF MIN 800 5 1.5 100 1 100 TYP. MAX UNIT V V V μA mA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=6A;IB1=1.2A; IB2-=-2.4A RL=33.3Ω;VCC=200V 0.1 4.0 0.2 μs μs μs 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5124 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon NPN Power Transistors 2SC5124 4