2SC5124

2SC5124 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5124 1500 800 6 10(Pulse20) 5 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose (Ta=25°C) 2SC5124 100max 1max 100max 800min 8min 4 to 9 5max 1.5max 3typ 130typ Unit µA mA µA V sElectrical Characteristics Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCE=12V, IE=–1A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 23.0±0.3 9.5±0.2 a b V V MHz pF 19.1 16.2 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 4.4 1.5 0.65 +0.2 -0.1 3.3 0.8 3.35 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 33.3 IC (A) 6 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 1.2 IB2 (A) –2.4 ton (µs) 0.1typ tstg (µs) 4.0typ tf (µs) 0.2typ 1.5 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 2.4 A VCE(sat)–IC Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C / I B =5:1 Collector Current I C (A) I C – V BE Temperature Characteristics (Typical) 10 (V CE =5V) 10 1. 8A 8 Collector Current I C (A) 8 1. 2A 2 6 700 mA 6 4 300 mA 4 1 2 I B =100mA 2 0 0 1 2 3 4 0 0.02 0.05 0.1 0.5 1 5 10 0 0 0.5 Base-Emittor Voltage V B E (V) 1.0 Collector-Emitter Voltage V C E (V) Collector Current I C (A) h FE – I C Characteristics (Typical) (V C E =5V) 40 DC Curr ent Gain h FE t stg •t f – I C Characteristics (Typical) 10 θ j-a – t Characteristics t o n• t s tg • t f ( µ s) 125˚C 25˚C 5 V C C 2 00V I C :I B 1 :–I B 2 =5:1:2 1 0.5 tf 0.1 0.2 t s tg 10 –55˚C 5 3 0.02 Switching Ti me 0.1 0.5 1 5 10 0.5 1 Collector Current I C (A) 5 10 Collector Current I C (A) Safe Operating Area (Single Pulse) 30 30 Reverse Bias Safe Operating Area 100 P c – T a Derating 10 Collector Curre nt I C ( A) 5 10 Co lle ctor Cu rre nt I C (A) 5 Maximu m Power Dissipa tion P C (W) 50 1 0.5 1 0.5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% 0.1 5 10 50 100 500 1000 Collector-Emitter Voltage V C E (V) 0.1 50 100 500 1000 2000 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 128 3.0 10 0µ s W ith In fin ite he at si nk