2SD1277

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1277 2SD1277A DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB951 and 2SB951A ・High forward current transfer ratio hFE ・High-speed switching APPLICATIONS ・For medium speed power switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL PARAMETER 2SD1277 VCBO Collector-base voltage 2SD1277A 2SD1277 VCEO Collector-emitter voltage 2SD1277A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open collector Open base 80 7 8 12 45 W V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1277 2SD1277A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO PARAMETER Collector-emitter breakdown voltage 2SD1277 IC=30mA , IB=0 2SD1277A IC=4A IB=8mA IC=4A IB=8mA VCB=60V IE=0 VCB=80V IE=0 VEB=7V; IC=0 IC=8A ; VCE=3V IC=4A ; VCE=3V IC=0.5A; VCE=10V;f=1MHz 500 2000 20 10000 MHz 80 1.5 2 0.1 0.1 2 V V V Ma mA mA CONDITIONS MIN 60 TYP. MAX UNIT V VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SD1277 ICBO Collector cut-off current 2SD1277A IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency Switching times ton tstg tf Turn-on time Storage time Fall time IC=4A ;IB1=8mA IB2=-8mA;VCC=50V 0.5 4 1 Μs Μs μs hFE-2 Classifications Q 2000-5000 R 4000-10000 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1277 2SD1277A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic