2SD1277

Power Transistors 2SD1277, 2SD1277A Silicon NPN triple diffusion planar type Darlington 0.7±0.1 For midium speed power switching Complementary to 2SB951 and 2SB951A 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm q q 16.7±0.3 q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 s Features φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 7 12 8 45 2 150 –55 to +150 Unit V 2SD1277 2SD1277A 2SD1277 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 +0.2 –0.1 Collector to base voltage Collector to 2.54±0.25 5.08±0.5 emitter voltage 2SD1277A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W B 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C ˚C ˚C E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1277 2SD1277A 2SD1277 2SD1277A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 7V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 4A VCE = 3V, IC = 8A IC = 4A, IB = 8mA IC = 4A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 8mA, IB2 = –8mA, VCC = 50V 20 0.5 4 1 60 80 2000 500 1.5 2 V V MHz µs µs µs 10000 min typ max 100 100 2 Unit µA mA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE1 1 Power Transistors PC — Ta 50 12 (1) 40 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 10 2SD1277, 2SD1277A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) — IC (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C (3) (2) (1) Collector power dissipation PC (W) Collector current IC (A) 3 8 IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 2 30 1 6 0.3 20 4 0.1 10 (2) (3) (4) 0.03 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 0.01 0.1 0.3 1 3 10 30 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=500 TC=100˚C 3 25˚C –25˚C VCB(sat) — IC 100000 hFE — IC IC/IB=500 VCE=3V Base to emitter saturation voltage VBE(sat) (V) 10 Forward current transfer ratio hFE 30000 TC=100˚C 25˚C –25˚C 3 TC=–25˚C 1 100˚C 25˚C 10000 1 3000 1000 300 100 30 10 0.1 0.3 0.3 0.1 0.1 0.03 0.03 0.01 0.1 0.3 1 3 10 30 0.01 0.1 0.3 1 3 10 30 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25˚C ICP 10 IC 3 1 0.3 0.1 0.03 0.01 1 3 10 30 DC 1ms t=10ms Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 (1) 10 (2) 1 2SD1277A 2SD1277 10–1 100 300 1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2