2N3904E

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B 2N3904E EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Leakage Current A G H 2 1 D 3 DIM A B C D E G H J : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. Complementary to 2N3906E. : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 J C 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg RATING 60 40 6 200 50 100 150 -55 150 UNIT V V V mA mA mW ESM Marking Type Name ZC 2003. 12. 12 Revision No : 0 1/4 2N3904E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage SYMBOL ICEX IBL V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) DC Current Gain * hFE(3) hFE(4) hFE(5) Collector-Emitter Saturation Voltage * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hie hre hfe hoe NF VCE=5V, IC=0.1mA Rg=1k f=10Hz 15.7kHz Vout V in 275Ω TEST CONDITION VCE=30V, VEB=3V VCE=30V, VEB=3V IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0, f=1MHz VBE=0.5V, IC=0, f=1MHz MIN. 60 40 6.0 40 70 100 60 30 0.65 300 1.0 TYP. - MAX. 50 50 300 0.2 0.3 0.85 0.95 4.0 8.0 10 8.0 400 40 5.0 UNIT nA nA V V V V Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Collector Output Admittance Noise Figure * V MHz pF pF k x10-4 VCE=10V, IC=1mA, f=1kHz 0.5 100 1.0 , - dB Delay Time td 10kΩ C Total< 4pF - - 35 300ns Rise Time Switching Time Storage Time tr 10.9V -0.5V VCC =3.0V 0 t r ,t f < 1ns, Du=2% Vout - - 35 nS V in 275Ω tstg 10kΩ 1N916 or equiv. C Total< 4pF - - 200 Fall Time tf 20µs 10.9V -9.1V VCC =3.0V 0 t r ,t f < 1ns, Du=2% - - 50 * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2003. 12. 12 Revision No : 0 2/4 2N3904E I C - V CE 100 COMMON EMITTER Ta=25 C h FE - I C DC CURRENT GAIN h FE 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 1k 500 300 Ta=125 C Ta=25 C COMMON EMITTER VCE =1V COLLECTOR CURRENT I C (mA) 80 60 100 50 30 Ta=-55 C 40 0.2 20 I B =0.1mA 10 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE V CE (V) V CE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 COMMON EMITTER I C /I B =10 0.1 0.05 0.03 Ta=125 C Ta=25 C Ta=-55 C 0.01 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) I C - V BE 200 COMMON EMITTER COLLECTOR CURRENT I C (mA) 160 VCE =1V V BE(sat) - I C 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 5 3 COMMON EMITTER I C /I E =10 120 Ta= 125 C Ta=25 C Ta=-55 C 80 1 0.5 0.3 Ta=-55 C 40 Ta=25 C Ta=125 C 0 0 0.4 0.8 1.2 (V) 1.6 BASE-EMITTER VOLTAGE V BE 0.1 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) 2003. 12. 12 Revision No : 0 3/4 2N3904E COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - I B 1.0 I C =1mA Cob - VCB , C ib - V EB 50 I C =100mA I C =10mA CAPACITANCE C ob (pF) C ib (pF) 0.8 0.6 0.4 0.2 I C =30mA 30 f=1MHz Ta=25 C 10 5 3 C ib C ob 0 0.001 COMMON EMITTER Ta=25 C 1 0.5 0.1 0.3 1 3 10 30 0.01 0.1 1 10 BASE CURRENT I B (mA) REVERSE VOLTAGE V CB (V) V EB (V) 2003. 12. 12 Revision No : 0 4/4