BAW56W

S EMICONDUCTOR MARKING SPECIFICATION BAW56W USM PACKAGE 1. Marking method Laser Marking 2. Marking 1 H3 Marking H3 01 01 2 No. ① ② Item Device Mark hFE Grade * Lot No. Description BAW56W 2006. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method Character arrangement Year 1 st Character 2nd Character 1 (A) A (1) 2 (B) B (2) 3 (C) C (3) 4 (D) D (4) 5 (E) E (5) 6 (F) F (6) 7 (G) G (7) 8 (H) H (8) 9 (I) I (9) Remark 0 (J) J (0) Marking (Week) 01 0A J1 JA 02 0B J2 JB … … … … 51 5A E1 EA 52 5B E2 EB Periode (Year) 2006-2010-2014... 2007-2011-2015... 1 st Year (2006) 2 nd Year (2007) 3 rd Year (2008) 4 th Year (2009) Rotation for 4 years 2008-2012-2016... 2009-2013-2017... 2008. 9. 8 Revision No : 1 1/1