KDV214E

SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES Low Series Resistance : rS=0.57 Useful for Small Size Tuner. (Max.) KDV214E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK High Capacitance Ratio : C2V/C25V=6.3(Typ.) Excellent C-V Characteristics, and Small Tracking Error. C 1 E 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 32 125 -55 125 UNIT V 1. ANODE 2. CATHODE B A DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance C(Max.)-C(Min.) C(Min.) (VR=2~25V) IR ) TEST CONDITION VR=28V VR=2V, f=1MHz VR=25V, f=1MHz MIN. 14.15 2.06 6.3 VR=5V, f=470MHz TYP. MAX. 10 15.75 2.35 0.57 UNIT nA pF pF - SYMBOL C2V C25V C2V/C25V rS Note : Available in matched group for capacitance to 2.0%. 0.02 Marking Type Name UO 2003. 12. 2 Revision No : 3 1/2 KDV214E I R - VR 10 REVERSE CURRENT I R (A) -10 C T - VR 20 TOTAL CAPACITANCE CT (pF) f=1MHz 10 -11 15 10 10 -12 5 10 -13 0 10 20 30 40 0 1 10 REVERSE VOLTAGE VR (V) 50 REVERSE VOLTAGE VR (V) r s - VR 0.6 SERIES RESISTANCE rs (Ω) f=470MHz ∆(LOG CT ) / ∆(LOG VR ) - VR 0 ∆(LOG CT) / ∆(LOG VR) 0.5 0.4 0.3 0.2 0.1 0 1 10 REVERSE VOLTAGE VR (V) 50 -0.5 -1.0 -1.5 1 10 REVERSE VOLTAGE VR (V) 50 2003. 12. 2 Revision No : 3 2/2