KDV214

S MD Type Silicon Epitaxial Planar Diode KDV214 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm +0.05 0.3-0.05 +0.05 0.85-0.05 Features High Capacitance Ratio : C2V/C25V=6.5(Typ.) Low Series Resistance : rS=0.4 (Typ.) 0.475 0.375 +0.1 2.6-0.1 1.0max Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. A bsolute M axim um R atings T a = 25 P aram eter R everse V oltage P eak R everse V oltage Junction T em perature S torage T em perature R ange S ym bol VR V RM Tj T stg V alue 32 35 (R L = 10K 125 -55 to + 125 ) U nit V V Electrical Characteristics Ta = 25 Parameter Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance Note : Available in matched group for capacitance to 2.5%. C(Max.)-C(Min.) C(Min.) 0.025 Symbol VR IR C 2V C 25V C 2V/C 25V rs V R = 5V, f = 470 MHz Conditions IR = 1 A Min 30 10 14.16 2.11 5.9 6.5 0.4 16.25 2.43 7.15 0.55 Typ Max Unit V nA pF V R = 28 V f = 1 MHz;V R = 2 V f = 1 MHz;V R = 25 V Marking Marking UO +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1