KMB2D0N60SA

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment. KMB2D0N60SA N-Ch Trench MOSFET L E B L FEATURES H 2 A G 1 3 VDSS=60V, ID=2A Drain-Source ON Resistance RDS(ON)=160m (Max.) @ VGS=10V RDS(ON)=220m (Max.) @ VGS=4.5V Super High Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N M K MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage ) SYMBOL VDSS VGSS N-Ch 60 20 2.0 1.6 10 1.0 1.25 W 0.8 150 -55 150 100 /W A A UNIT V V SOT-23 DC@Ta=25 Drain Current DC@Ta=70 Pulsed Drain-Source-Diode Forward Current Drain Power Dissipation Ta=25 Ta=70 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient ID IDP IS PD Tj Tstg RthJA KND Note>*Surface Mounted on 1” × 1” FR4 Board, t≤5sec PIN CONNECTION (TOP VIEW) D 3 3 2 1 G S 2 1 2008. 2. 25 Revision No : 1 J D 1/5 KMB2D0N60SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance BVDSS IDSS VGS=0V, VDS=60V, Tj=55 IGSS Vth RDS(ON)* VGS=4.5V, ID=1.7A On-State Drain Current Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-Off Deley Time Turn-Off Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage NOTE 1> * Pulse Test : Pulse width