SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION.
KTC3543T
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
Adoption of MBIT Processes. High Current Capacitance. Low Collector-to-Emitter Saturation Voltage.
A F G
K
B
DIM A B
2 3 C D
MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1
2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55
D
Ultrasmall-sized Package Permitting Applied sets to be made small and slim. High Allowable Power Dissipation. Complementary to KTA1543T.
C L
G
High-Speed Switching.
1
E F G H I J K L
H J
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse
)
SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 ) RATING 40 30 6 5 7 1.2 0.9 150 -55 150 UNIT V V V A A W
J
1. EMITTER 2. BASE 3. COLLECTOR
Marking
Lot No. Type Name
* Package mounted on a ceramic board (600
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton
INPUT
TEST CONDITION VCB=30V, IE=0 VEB=4V, IC=0 IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 IC=2.5A, IB=50mA IC=2.5A, IB=50mA VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz
PW=20µs DC < 1% = IB1 I B2 RB 50Ω VR 100µF 470µF VCC =12V RL
MIN. 40 30 6 200 -
OUTPUT
Storage Time
tstg
Fall Time
tf
V BE =-5V 20IB1=-20IB2=IC =2.5A
2001. 6. 29
Revision No : 0
I
TSM
HJ
TYP. 110 0.82 290 40 30 MAX. 0.1 0.1 165 1.2 560 MHz pF UNIT A A V V V mV V
-
320
-
nS
-
14
-
1/3
KTC3543T
I C - V CE
5
A
h FE - I C
40m A
30mA
COLLECTOR CURRENT I C (A)
10
DC CURRENT GAIN h FE
50
0m
mA
1K 500 300
Ta=75 C Ta=25 C Ta=-25 C
4 3 2 1 0 0
60mA 70mA 80mA 90mA
20mA
10mA
100 50 30
VCE =2V
IB=0mA
100
200
300
400
500
10 0.01
0.03
0.1
0.3
1
3
10
COLLECTOR-EMITTER VOLTAGE VCE (mV)
COLLECTOR CURRENT I C (A)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 100 50 30 10 5 3 1 0.01
75 Ta=
25 Ta=
VCE(sat) - I C
I C /I B =20
1K 500 300
I C /I B =50
C
C
-25 Ta=
C
100 50 30
75 Ta= 25 Ta= C
25 =Ta
C
C
0.03
0.1
0.3
1
3
10
10 0.01
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
VBE(sat) - I C
10K BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) 5K 3K COLLECTOR CURRENT I C (A)
I C /I B =50
I C - V BE
1.0 0.9 0.8 0.7 0.6
C
VCE =2V
500 300
Ta=25 C
Ta=75 C
0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5
100 0.01
0.03
0.1
0.3
1
3
10
0.6
0.7
Ta=-25
Ta=75
Ta=25
1K
Ta=-25 C
0.5
C
C
0.8
0.9
COLLECTOR CURRENT I C (A)
BASE-EMITTER VOLTAGE V BE (V)
2001. 6. 29
Revision No : 0
2/3
KTC3543T
fT -IC
TRANSIION FREQUENCY f T (MHz) 1K 500 300 COLLECTOR OUTPUT CAPACITANCE C ob (pF)
VCE =10V
C ob - V CB
1K 500 300
f=1MHz
100 50 30
100 50 30
10 0.01
0.03
0.1
0.3
1
3
10 1 3 5 10 30 COLLECTOR-BASE VOLTAGE VCB (V)
COLLECTOR CURRENT I C (A)
SAFE OPERATING AREA
10 COLLECTOR CURRENT I C (A) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01
IC MAX.(PULSED) I C MAX (CONTINUOUS)
DC OP ER
Pc - Ta
COLLECTOR POWER DISSIPATION PC (W)
S* 0µ S* 10 0µ 50 S* 1m
1.2
MOUNTED ON A
10
m
10
S*
1.0 0.8 0.6 0.4 0.2 0
CERAMIC BOARD (600mm 2 0.8mm)
0m
S*
AT
IO
N
* SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm)
0
20
40
60
80
100
120
140
160
0.1
0.3 0.5
1
3
5
10
30 50
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001. 6. 29
Revision No : 0
3/3
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