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KTC8050S-D-RTK/P

KTC8050S-D-RTK/P

  • 厂商:

    KEC

  • 封装:

    SOT-23

  • 描述:

    NPN,Vceo=30V,Ic=800mA,hFE=150~300

  • 数据手册
  • 价格&库存
KTC8050S-D-RTK/P 数据手册
SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ・Complementary to KTC8550S. E B L D L H MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Emitter Current IE -800 mA PC * 350 mW Tj 150 ℃ Tstg -55~150 ℃ Collector Power Dissipation Junction Temperature Storage Temperature Range 1 Q P K J N P C CHARACTERISTIC 3 G A 2 DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 * PC : Package Mounted On 99.5% Alumina (10×8×0.6㎜) Marking h FE Rank Type Name Lot No. BK ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=15V, IE=0 - - 50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=0.5mA, IE=0 35 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 30 - - V hFE(1) (Note) VCE=1V, IC=50mA 100 - 300 hFE(2) VCE=1V, IC=350mA 60 - - VCE(sat) IC=500mA, IB=20mA - - 0.5 V Base-Emitter Voltage VBE VCE=1V, IC=500mA - - 1.2 V Transition Frequency fT VCE=5V, IC=10mA - 120 - MHz VCB=10V, f=1MHz, IE=0 - 13 - pF Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE(1) Classification 2003. 3. 25 C : 100~200, D : 150~300 Revision No : 1 1/2 KTC8050S I C - V CE h FE - I C 1k COMMON EMITTER Ta=25 C 8 800 DC CURRENT GAIN h FE 7 6 5 4 600 3 400 2 I B =1mA 200 VCE =1V 500 300 Ta=100 C Ta=25 C 100 Ta=-25 C 50 30 0 10 0 0 1 2 3 4 5 6 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) VCE(sat) - I C I C - VBE 1 1k 1k 0.1 C 25 C -25 C Ta=-25 C 0.05 0.03 Ta=25 C Ta=100 C 0.01 100 50 30 10 5 C 00 =1 Ta Ta=-2 0.3 COMMON EMITTER VCE =1V 500 300 Ta=25 C 0.5 C COMMON EMITTER I C /I B =25 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COMMON EMITTER Ta= 100 COLLECTOR CURRENT I C (mA) 1k 5 3 1 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR POWER DISSIPATION Pc (mW) Pc - Ta 500 1 MOUNTED ON 99.5% ALUMINA 10x8x0.6mm 400 2 Ta=25 C 1 300 200 2 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2003. 3. 25 Revision No : 1 2/2
KTC8050S-D-RTK/P 价格&库存

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免费人工找货
KTC8050S-D-RTK/P
    •  国内价格
    • 1+0.32820
    • 200+0.10910
    • 1500+0.06820
    • 3000+0.04700

    库存:0

    KTC8050S-D-RTK/P
    •  国内价格
    • 10+0.07828
    • 50+0.07241
    • 200+0.06752
    • 600+0.06262
    • 1500+0.05871
    • 3000+0.05626

    库存:1530

    KTC8050S-D-RTK/P
      •  国内价格
      • 1+0.04890

      库存:0

      KTC8050S-D-RTK/P
        •  国内价格
        • 50+0.10825
        • 500+0.08731
        • 3000+0.06748
        • 6000+0.06051

        库存:0