KTC8550-D-AT/PC

SEMICONDUCTOR KTC8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ・Complementary to KTC8050. N K MAXIMUM RATING (Ta=25℃) UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V VEBO -5 V Collector Current IC -800 mA Emitter Current IE 800 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ H Storage Temperature Range F F L Emitter-Base Voltage J RATING 1 2 3 C SYMBOL G D DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC E 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-15V, IE=0 - - -50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-0.5mA, IE=0 -35 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -30 - - V hFE(1) (Note) VCE=-1V, IC=-50mA 100 - 300 hFE(2) VCE=-1V, IC=-350mA 60 - - VCE(sat) IC=-500mA, IB=-50mA - - -0.5 V Base-Emitter Voltage VBE VCE=-1V, IC=-500mA - - -1.2 V Transition Frequency fT VCE=-5V, IC=-10mA - 120 - MHz VCB=-10V, f=1MHz, IE=0 - 19 - pF Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE(1) Classification 2011. 4. 4 C : 100～200, D : 150～300 Revision No : 5 1/2 KTC8550 I C - V CE 2k -800 -8 DC CURRENT GAIN h FE COMMON EMITTER Ta=25 C -7 -6 -5 -600 -4 -400 -3 -2 -200 0 -1 -2 -3 -4 -5 Ta=25 C Ta=-25 C 100 50 30 10 -6 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) VCE(sat) - I C I C - V BE -0.1 Ta=100 C -0.05 -0.03 Ta=25 C Ta=-25 C -0.01 -3 -10 -30 -100 -300 -1k COMMON EMITTER VCE =-1V -100 -50 -30 -10 C -0.5 -0.3 -1k Ta= -25 -1 -1k -500 -300 25 C COMMON EMITTER I C /I B =25 COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION PC (mW) Ta=100 C COLLECTOR-EMITTER VOLTAGE V CE (V) -3 -1 500 300 Ta= 0 COMMON EMITTER VCE =-1V 1k Ta= 100 C 0 IB =-1mA COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VCE(sat) (V) COLLECTOR CURRENT I C (mA) -1k h FE - I C -5 -3 -1 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMITTER VOLTAGE V BE (V) Pc - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2011. 4. 4 Revision No : 5 2/2