KTC8550S-D-RTK/P

SEMICONDUCTOR KTC8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E B L D L ・Complementary to KTC8050S. H MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Emitter Current IE 800 mA PC * 350 mW Tj 150 ℃ Tstg -55～150 ℃ 3 G A 2 1 Q Collector Power Dissipation Junction Temperature Storage Temperature Range P K J N C P DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 * PC : Package Mounted On 99.5% Alumina (10×8×0.6㎜) Marking h FE Rank Type Name Lot No. BL ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-15V, IE=0 - - -50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-0.5mA, IE=0 -35 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -30 - - V hFE(1) (Note) VCE=-1V, IC=-50mA 100 - 300 hFE(2) VCE=-1V, IC=-350mA 60 - - VCE(sat) IC=-500mA, IB=-50mA - - -0.5 V Base-Emitter Voltage VBE VCE=-1V, IC=-500mA - - -1.2 V Transition Frequency fT VCE=-5V, IC=-10mA - 120 - MHz VCB=-10V, f=1MHz, IE=0 - 19 - pF Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE(1) Classification 2003. 3. 25 C : 100～200, D : 150～300 Revision No : 1 1/2 KTC8550S I C - V CE h FE - I C 2k COMMON EMITTER Ta=25 C -800 -8 DC CURRENT GAIN h FE -7 -6 -5 -600 -4 -400 -3 -2 -200 IB =-1mA 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 0 10 0 -1 -2 -3 -4 -5 -6 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C I C - VBE -0.5 -0.3 -0.1 Ta=100 C -0.05 -0.03 Ta=25 C Ta=-25 C -0.01 -3 -10 -30 -100 -300 -1k -1k COMMON EMITTER VCE =-1V -100 -50 -30 Ta= -25 C -1 -1k -500 -300 Ta= 25 C COMMON EMITTER I C /I B =25 C COLLECTOR CURRENT I C (mA) -3 -1 -1 100 0 COLLECTOR-EMITTER SATURATION VCE(sat) (V) COMMON EMITTER VCE =-1V 1k Ta= COLLECTOR CURRENT I C (mA) -1k -10 -5 -3 -1 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION Pc (mW) Pc - Ta 500 1 MOUNTED ON 99.5% ALUMINA 10x8x0.6mm 400 2 Ta=25 C 1 300 200 2 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2003. 3. 25 Revision No : 1 2/2