SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER APPLICATION.
A
KTD2066
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES High DC Current Gain : hFE=500 1500(IC=1A). Low Collector Saturation Voltage : VCE(sat)=0.35V(Max.) (IC=3A).
S E
DIM A B C D E F
G H J K L M N P Q R H S
K
L
L
R
M D D J
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25
)
SYMBOL VCBO VCEO VEBO IC ICP IB PC 30 Tj Tstg 150 -55 150
BASE
RATING 100 80 7 5
UNIT V V
1
MILLIMETERS _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2
0.5 Typ
F
N
N
G
B 2 3
V A
Q
1. BASE 2. COLLECTOR 3. EMITTER
8
TO-220IS
1 2 W A
EQUIVALENT CIRCUIT
COLLECTOR
P
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain hFE(2) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Emitter Forward Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time VCE(sat) VBE(sat) VECF fT Cob ton Tstg tf
IB1 0 IB2 I B2
SYMBOL ICBO IEBO V(BR)CEO hFE(1)
TEST CONDITION VCB=80V, IE=0 VEB=7V, IC=0 IC=50mA, IB=0 VCE=1V, IC=1A VCE=1V, IC=5A IC=3A, IB=0.03A IC=3A, IB=0.03A IE=3A, IB=0 VCE=5V, IC=1A VCE=10V, IE=0, f=1MHz
OUTPUT 20µsec 30Ω INPUT I B1
MIN. 80 500 150 -
TYP. 130 110 0.6 3.0 0.8
MAX. 10 10 1500 0.35 1.2 2.5 -
UNIT A A V
V V V MHz pF
S
IB1=-I B2 =10mA DUTY CYCLE < 1%
VCC =30V
2007. 5. 22
Revision No : 2
1/2
KTD2066
h FE - I C
3k DC CURRENT GAIN h FE COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 2 1 0.5 0.3
VCE(sat) - I C
COMMON EMITTER I C /IB =100
1k 500 300
VCE =2V VCE =1V
VCE =5V
Tc
=1
00
C
0.1 0.05
Tc=25 C
Tc=-55 C
100
COMMON EMITTER Tc=25 C
50 0.05
0.02 0.05
0.1
0.3
1
3
5
10
0.1
0.3
1
3
5
10 COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
h FE - I C
3k COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE 8
20 14
I C - V CE
COMMON EMITTER Ta=25 C 10 6
1k 500 300
Tc=100 C Tc=25 C Tc=-55 C
6
4
4
2
100
I B =2mA 0
COMMON EMITTER VCE =1V
50 0.05
0 1 3 5 10 0 4 8
0.1
0.3
12
16
20
COLLECTOR CURRENT I C (A)
COLLECTOR-EMITTER VOLTAGE V CE (V)
r th - t w
TRANSIENT THERMAL RESISTANCE r th ( C/W)
CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SINGLE NONREPETITIVE PULSE) (1) NO HEAT SINK (2) INFINITE HEAT SINK (Tc=25 C) (1)
SAFE OPERATING AREA
20 COLLECTOR CURRENT IC (A) 10 5 3
I C MAX.(PULSED)
10 S 0m
1m S
10 S 0µ
100 10
I C MAX. (CONTINUOUS)
10 mS
IO AT ER C OP =25 c DC T
1 0.5 0.3
(2)
1 0.1 0.001
N
0.01
0.1
1
10
100
1k
0.1 0.05 0.02 1
PULSE WIDTH t w (S)
3
10
30
100
V CEO MAX.
SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE
200
COLLECTOR-EMITTER VOLTAGE V CE (V)
2007. 5. 22
Revision No : 2
2/2
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