KTN2222_03

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B KTN2222/A EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to the KTN2907/2907A. KTN2222/2222A Electrically Similar to 2N2222/2222A. H A Low Leakage Current N K D G E F F L M 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25 ) Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING KTN2222 60 30 5 600 625 150 -55 150 KTN2222A 75 40 6 UNIT V V V mA mW 1. EMITTER 2. BASE 3. COLLECTOR TO-92 2003. 6. 16 Revision No : 2 1/5 KTN2222/A ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * KTN2222A KTN2222 KTN2222A KTN2222A KTN2222 KTN2222A KTN2222 KTN2222A KTN2222 KTN2222A V(BR)CBO IC=10 A, IE=0 SYMBOL ICEX ICBO IEBO TEST CONDITION VCE=60V, VEB(OFF)=3V VCB=50V, IE=0 VCB=60V, IE=0 VEB=3V, IC=0 MIN. 60 75 V(BR)CEO IE=10mA, IB=0 30 40 5 6 35 50 75 100 30 40 0.6 250 300 TYP. MAX. 10 0.01 0.01 10 300 0.4 0.3 1.6 1 1.3 1.2 2.6 2.0 8 30 25 MHz pF pF V V V UNIT nA A nA V V(BR)EBO hFE(1) IE=10 A, IC=0 IC=0.1mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V IC=500mA, VCE=10V V KTN2222 KTN2222A DC Current Gain * KTN2222 KTN2222A KTN2222 Collector-Emitter Saturation Voltage * KTN2222A KTN2222 KTN2222A KTN2222 Base-Emitter Saturation Voltage * KTN2222A KTN2222 KTN2222A Transition Frequency Collector Output Capacitance Input Capacitance KTN2222 KTN2222A KTN2222 KTN2222A hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat)1 IC=150mA, IB=15mA VCE(sat)2 IC=500mA, IB=50mA VBE(sat)1 IC=150mA, IB=15mA VBE(sat)2 IC=500mA, IB=50mA fT Cob Cib IC=20mA, VCE=20V, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2003. 6. 16 Revision No : 2 2/5 KTN2222/A ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Input Impedance KTN2222A SYMBOL hie TEST CONDITION IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IE=20mA, VCB=20V, f=31.8MHz IC=100 A, VCE=10V, Rg=1k , f=1kHz VCC=30V, VBE(OFF)=0.5V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=-IB2=15mA MIN. 2 0.25 50 75 5 25 TYP. MAX. 8 1.25 8 4 300 375 35 200 150 4 10 25 225 60 nS pS dB UNIT k Voltage Feedback Ratio KTN2222A hre x10-4 Small-Singal Current Gain KTN2222A hfe Collector Output Admittance Collector-Base Time Constant Noise Figure KTN2222A KTN2222A KTN2222A Delay Time hoe Cc rbb' NF td tr tstg tf Switching Time Rise Time Storage Time Fall Time 2003. 6. 16 Revision No : 2 3/5 KTN2222/A I C - V CE COLLECTOR CURRENT I C (mA) 1000 800 600 400 200 COMMON EMITTER Ta=25 C 20mA 18mA 16mA 14mA 12mA 10mA 8mA 6mA 4mA I B =2mA h FE - I C 1K DC CURRENT GAIN h FE 500 300 Ta=75 C Ta=25 C Ta=-25 C VCE =1V VCE =2V VCE =10V 100 50 30 0 0.4 0.8 1.2 1.6 1.8 10 0.5 1 3 10 30 100 300 1K COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0.6 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I B =10 Ta=25 C VBE(sat) - I C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.5 1 3 10 30 100 300 1k Ta=-25 C Ta=25 C Ta=75 C COMMON EMITTER I C /I B =10 VBE(sat) 0.4 0.2 VCE(sat) 0 0.5 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE COMMON EMITTER VCE =10V fT - IC TRANSITION FREQUENCY f T (MHz) 1000 Ta=25 C VCE =10V 500 300 COLLECTOR CURRENT I C (mA) 100 30 10 3 1 0.3 0.1 0.05 300 Ta=75 C C 100 Ta= 25 Ta=-25 C 30 10 -1 -3 -10 -30 -100 -300 -1k -3k COLLECTOR CURRENT I C (mA) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 BASE-EMITTER VOLTAGE VBE (V) 2003. 6. 16 Revision No : 2 4/5 KTN2222/A COLLECTOR OUTPUT CAPACITANCE Cob (pF) COLLECTOR INPUT CAPACITANCE Cib (pF) COMMON EMITTER f=1MHz, Ta=25 C COLLECTOR POWER DISSIPATION PC (mW) 100 Cob - V CB Cib - V EB Pc - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 30 Cib 10 3.0 Cob 1.0 -0.1 -1.0 -10 -100 -300 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) AMBIENT TEMPERATURE Ta ( C) 2003. 6. 16 Revision No : 2 5/5