KTX102E

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. KTX102E EPITAXIAL PLANAR PNP/NPN TRANSISTOR B FEATURES Including two devices in TES6. (Thin Extreme Super mini type with 6 Pin.) Reduce a quantity of parts and manufacturing process. A1 B1 Simplify circuit design. A C 1 6 5 2 3 4 EQUIVALENT CIRCUIT (TOP VIEW) Type Name H P P DIM A A1 B B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 C 6 5 4 MARKING 6 5 4 h FE Rank 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1 EMITTER BASE BASE COLLECTOR EMITTER COLLECTOR Q1 Q2 D 1 2 3 1 2 3 TES6 Q1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current ) SYMBOL VCBO VCEO VEBO IC IB RATING -50 -50 -5 -150 -30 UNIT V V V Q2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current ) SYMBOL VCBO VCEO VEBO IC IB RATING 60 50 5 150 30 UNIT V V V Q1, Q2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. 2004. 1. 28 ) SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT Revision No : 0 J D 1/5 KTX102E Q1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note) hFE Classification : Y(4)120~240, SYMBOL ICBO IEBO hFE (Note) VCE(sat) fT Cob NF GR(6)200~400 TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2 IC=-100 , IB=-10 MIN. 120 80 , Rg=10 TYP. -0.1 4.0 1.0 MAX. -0.1 -0.1 400 -0.3 7.0 10 V UNIT. VCE=-10V, IC=-1 VCB=-10V, IE=0, f=1 VCE=-6V, IC=-0.1 , f=1 Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note) hFE Classification : Y(4)120~240, SYMBOL ICBO IEBO hFE (Note) VCE(sat) fT Cob NF GR(6)200~400 ) TEST CONDITION VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2 IC=100 , IB=10 VCE=10V, IC=1 VCB=10V, IE=0, f=1 VCE=6V, IC=0.1 , f=1 , Rg=10 MIN. 120 80 TYP. 0.1 2.0 1.0 MAX. 0.1 0.1 400 0.25 3.5 10 V UNIT. 2004. 1. 28 Revision No : 0 2/5 KTX102E Q 1 (PNP TRANSISTOR) I C - VCE COLLECTOR CURRENT I C (mA) -240 -200 -160 -120 -80 -40 0 I B =-0.5mA I B =-0.2mA I B =0mA I B =-2.0mA I B =-1.5mA I B =-1.0mA COMMON EMITTER Ta=25 C h FE - I C 3k COMMON EMITTER DC CURRENT GAIN h FE 1k 500 300 Ta=100 C Ta=25 C VCE =-6V 100 50 Ta=-25 C VCE =-1V 0 -1 -2 -3 -4 -5 -6 -7 30 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) COMMON EMITTER I C /I B =10 VBE(sat) - I C -10 -5 -3 COMMON EMITTER I C/I B=10 Ta=25 C -0.1 -0.05 -0.03 00 =1 Ta C -1 -0.5 -0.3 Ta=25 C Ta=-25 C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) f T - IC TRANSITION FREQUENCY f T (MHz) 3k 1k 500 300 100 50 30 10 0.1 COMMON EMITTER VCE =-10V Ta=25 C I B - VBE -1k BASE CURRENT IB (µA) -300 -100 -30 -10 -3 -1 -0.3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Ta=2 5C Ta=-2 5C Ta=1 00 C COMMON EMITTER VCE =-6V 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) 2004. 1. 28 Revision No : 0 3/5 KTX102E Q 2 (NPN TRANSISTOR) I C - VCE 240 COLLECTOR CURRENT I C (mA) 6.0 5.0 3.0 COMMON EMITTER Ta=25 C h FE - I C 1k DC CURRENT GAIN h FE 500 300 Ta=100 C Ta=25 C Ta=-25 C VCE =6V COMMON EMITTER 200 160 120 80 40 0 2.0 1.0 0.5 I B =-0.2mA 0 100 50 30 VCE =1V 0 1 2 3 4 5 6 7 10 0.1 0.3 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 C VBE(sat) - I C 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 5 3 COMMON EMITTER I C /I B=10 Ta=25 C COMMON EMITTER IC /I B=10 0.1 0.05 0.03 Ta =1 00 1 0.5 0.3 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 100 300 0.1 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) f T - IC TRANSITION FREQUENCY f T (MHz) 3k 1k 500 300 100 50 30 10 COMMON EMITTER VCE =10V Ta=25 C I B - VBE 3k BASE CURRENT I B (µA) 1k 300 100 Ta=1 00 COMMON EMITTER VCE =6V 30 10 3 1 0.1 0.3 1 3 10 30 100 300 0.3 0 0.2 0.4 C Ta=2 5C Ta=25 C 0.6 0.8 1.0 1.2 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) 2004. 1. 28 Revision No : 0 4/5 KTX102E COLLECTOR POWER DISSIPATION PC (mW) Pc - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2004. 1. 28 Revision No : 0 5/5