SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. FEATURES
Including two devices in TS6. (Thin Super Mini type with 6 pin) Simplify circuit design.
G A F
K 1
KTX111T
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
E B K 6
Reduce a quantity of parts and manufacturing process.
2
5
DIM A B C D E
D
F G H I J
3
4
MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2
0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55
J
Marking
Q1 Q2
h FE Rank Type Name
6
5
4
Lot No.
B
1 2 3
1. 2. 3. 4. 5. 6.
Q1 Q1 Q2 Q2 Q2 Q1
EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR
1
2
3
Q1 MAXIMUM RATINGS (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current
)
SYMBOL VCBO VCEO VEBO IC IE RATING 35 30 5 500 -500 UNIT V V V
Q2 MAXIMUM RATINGS (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current
)
SYMBOL VCBO VCEO VEBO IC IE RATING -35 -30 -5 -500 500 UNIT V V V
Q1, Q2 MAXIMUM RATINGS (Ta=25
CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600
)
SYMBOL PC * Tj Tstg 0.8 ) RATING 0.9 150 -55 150 UNIT W
2002. 1. 24
Revision No : 1
I
6
5
4
L
EQUIVALENT CIRCUIT (TOP VIEW)
G
K L J H
C
TS6
1/4
KTX111T
Q1 ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO IEBO hFE(1) (Note) hFE(2) (Note) VCE(SAT) VBE fT Cob
)
TEST CONDITION VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100 VCE=6V, IC=400 IC=100 , IB=10 VCE=1V, IC=100 VCE=6V, IC=20 VCB=6V, IE=0, f=1 MIN. 70 25 TYP. 0.1 0.8 300 7.0 MAX. 0.1 0.1 240 0.25 1.0 V V UNIT.
Note) hFE(1) Classification O:70~140, Y:120~240. hFE(2) Classification O:25(Min), Y:40(Min).
Q2 ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO IEBO
)
TEST CONDITION VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100 VCE=-6V, IC=-400 IC=-100 , IB=-10 VCE=-1V, IC=-100 VCE=-6V, IC=-20 VCB=-6V, IE=0, f=1 MIN. 70 25 TYP. -0.1 -0.8 200 13 MAX. -0.1 -0.1 240 -0.25 -1.0 V V UNIT.
hFE(1) (Note) hFE(2) (Note) VCE(SAT) VBE fT Cob
Note) hFE(1) Classification O:70~140, Y:120~240. hFE(2) Classification O:25(Min), Y:40(Min).
2002. 1. 24
Revision No : 1
2/4
KTX111T
Q 1 (NPN TRANSISOR)
I C - VCE
500 COLLECTOR CURRENT I C (mA) 400 300 200 100
0 COMMON EMITTER Ta=25 C 6.0 4.0 3.0 2.0
h FE - I C
500 DC CURRENT GAIN h FE 300
Ta=100 C VCE =6V
100 50 30
Ta=-25 C Ta=25 C VCE =1V COMMON EMITTER
1.0 0.5 I B =0.1mA
0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V)
10 0.5 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA)
I B - VBE
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 2k 1k BASE CURRENT I B (µA) 500 300
C C Ta= 100 25 C
VCE(sat) - I C
1 0.5 0.3
COMMON EMITTER I C /I B =10
COMMON EMITTER VCE =6V
Ta=
50 30 10 5 0 0.2 0.4
Ta=
100
-25
0.1 0.05 0.03
Ta=100 C Ta=25 C Ta=-25 C
0.6
0.8
1.0
0.01 0.5
1
3
10
30
100
300
1K
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT I C (mA)
Q 2 (PNP TRANSISOR)
I C - VCE
-600 COLLECTOR CURRENT I C (mA) -500 -400 -300 -200 -100 0 0 -1 -2 -3
0 -8 -7 -6 -5 COMMON EMITTER Ta=25 C -4 -3 -2 I B =-1mA
h FE - I C
1k 500 DC CURRENT GAIN h FE 300
Ta=100 C Ta=25 C VCE =-6V COMMON EMITTER
100 50 30
Ta=-25 C
VCE =-1V
-4
-5
10 -0.3
-1
-3
-10
-30
-100
-300
-1k
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (mA)
2002. 1. 24
Revision No : 1
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KTX111T
V CE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.5 -1 -3 -10 -30 -100 -300 -1k
Ta=100 C Ta=25 C Ta=-25 C COMMON EMITTER I C /I B =10
I B - VBE
-3k -1k BASE CURRENT I B (µA) -300 -100 -30 -10 -3 -1 -0.3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
COMMON EMITTER VCE =-6V
Ta=1 00 C Ta=2 5C Ta=25 C
COLLECTOR CURRENT I C (mA)
BASE-EMITTER VOLTAGE VBE (V)
Pc - Ta
COLLECTOR POWER DISSIPATION PC (W) 1.2
MOUNTED ON A
1.0 0.8 0.6 0.4 0.2 0
CERAMIC BOARD (600mm 2 0.8mm)
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C)
2002. 1. 24
Revision No : 1
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