KU047N08P

SEMICONDUCTOR TECHNICAL DATA General Description T his Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES ・VDSS= 75V, ID= 130A ・Drain-Source ON Resistance : RDS(ON)=4.7mΩ(Max.) @VGS = 10V D N N A KU047N08P N-ch Trench MOS FET O C F E G B Q DIM MILLIMETERS _ 9.9 + 0.2 A B C D E I K M L J H P F G H I J K L M N O 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 4.5 + 0.2 _ 2.4 + 0.2 _ 9.2 + 0.2 MAXIMUM RATING (Tc=25℃) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25℃ Drain Current @TC=100℃ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25℃ Derate above 25℃ SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RATING 75 ±20 130 83 400* 700 9 4.5 167 1.33 150 -55 ~ 150 mJ mJ V/ns W W/℃ ℃ ℃ A UNIT V V 1 2 3 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 0.75 62.5 ℃/W ℃/W * : Drain current limited by maximum junction temperature. PIN CONNECTION D G S 2011. 1. 14 Revision No : 0 1/7 KU047N08P ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS ΔBVDSS/ΔTj IDSS Vth IGSS RDS(ON) ID=250μ VGS=0V A, ID=5mA, Referenced to 25℃ VDS=75V, VGS=0V, VDS=VGS, ID=250μ A VGS=±20V, VDS=0V VGS=10V, ID=65A 75 2.0 0.07 3.9 10 4.0 ±100 4.7 V V/℃ μ A V nA mΩ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS