MMBTA44

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage. Collector Power Dissipation : PC=350mW. MMBTA44 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-BaseVoltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg RATING 450 400 6 300 350 150 -55 0.6mm. 150 UNIT V V V mA mW * : Package Mounted On 99.5% Alumina 10 8 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (2) Emitter-Base Breakdown Voltage Collector Cut off Current Collector Cut off Current Emitter Cutoff Current SYMBOL V(BR)CBO V(BR)CEO V(BR)CES V(BR)EBO ICBO ICES IEBO TEST CONDITION IC=100 A, IE=0 IC=1mA, IB=0 IC=100 A, IB=0 IE=10 A, IC=0 VCB=400V, IE=0 VCE=400V, IB=0 VEB=4V, IC=0 VCE=10V, IC=1mA DC Current Gain * hFE VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE(sat) 1 Collector-Emitter Saturation Voltage * VCE(sat) 2 VCE(sat) 3 Base-Emitter Saturation Voltage * Transition Frequency Collector Output Capacitance Input Capacitance *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% VBE(sat) fT Cob Cib IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCE=10V, IC=10mA, f=10MHz VCB=20V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz MIN. 450 400 450 6.0 40 50 45 40 20 TYP. MAX. 100 500 100 200 0.4 0.5 0.75 0.75 7 130 V MHz pF pF V UNIT V V V V nA nA nA 2008. 3. 10 Revision No : 2 1/2 MMBTA44 2008. 3. 10 Revision No : 2 2/2