MMBTA44

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) SOT–23 FEATURES  High Collector-Emitter Voltage  Complement to MMBTA94 MARKING: 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V Collector Current-Continuous 200 mA Collector Current -Pulsed 300 mA Collector Power Dissipation 350 mW Thermal Resistance From Junction To Ambient 357 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ IC IC0 PC RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICBO VCB=400V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(1) * VCE=10V, IC=1mA 40 hFE(2) * VCE=10V, IC=10mA 50 hFE(3) * VCE=10V, IC=50mA 45 hFE(4) * VCE=10V, IC=100mA 40 200 VCE(sat)1* IC=1mA, IB=0.1mA 0.4 V VCE(sat)2* IC=10mA, IB=1mA 0.5 V VCE(sat)3* IC=50mA, IB=5mA 0.75 V VBE(sat)* IC=10mA, IB=1mA 0.75 V Collector output capacitance Cob VCB=20V, IE=0, f=1MHz 7 pF Emitter input capacitance Cib VEB=0.5V, IC=0, f=1MHz 130 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. C,Jun,2013 Typical Characteristics Static Characteristic 16 hFE DC CURRENT GAIN (mA) 64uA IC COLLECTOR CURRENT VCE= 10V COMMON EMITTER Ta=25℃ 72uA 12 hFE —— IC 1000 80uA 14 MMBTA44 56uA 10 48uA 8 40uA 6 32uA Ta=100℃ Ta=25℃ 100 24uA 4 16uA 2 IB=8uA 0 0 5 10 15 COLLECTOR-EMITTER VOLTAGE VCE 1 COLLECTOR CURRENT (V) VCEsat —— VBEsat —— IC 1.0 10 IC 100 (mA) IC 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 10 0.1 20 0.8 Ta=25℃ 0.6 Ta=100℃ 0.4 β=10 100 Ta=100℃ Ta=25℃ 30 0.2 0.0 0.1 10 1 10 COLLECTOR CURRENT Cob / Cib —— 500 IC 100 VCB / VEB COLLECTOR POWER DISSIPATION Pc (mW) (pF) C CAPACITANCE Pc 400 Ta=25℃ Cib Cob 10 10 100 COLLECTOR CURRENT f=1MHz IE=0 / IC=0 100 1 (mA) —— IC (mA) Ta 350 300 250 200 150 100 50 1 0.1 0 1 REVERSE VOLTAGE 10 V (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) C,Jun,2013