2SB1026

S MD Type Silicon PNP Epitaxial 2SB1026 Transistors Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature *1 PW 10 ms, Duty cycle 20% Symbol VCBO VCEO VEBO IC iC(peak)*1 PC*2 Tj Tstg Rating -120 -100 -5 -1 -2 1 150 -55 to 150 Unit V V V A A W *2 Value on the alumina ceramic board (12.5X 20X 0.7 mm) Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE fT Cob Testconditons IC = -10 ìA, IE = 0 IC = -1 mA, RBE = IE = -10 ìA, IC = 0 VCB = -100 V, IE = 0 VCE = -5 V, IC = -150mA, VCE = -5 V, IC = -500mA IC = -0.5 A, IB = -50 mA, VCE = -5 V, IC = -150mA, VCE = -5 V, IC = -150 mA VCB = -10 V, IE = 0,f = 1 MHz 140 20 60 30 -1.0 -0.9 V V MHz pF Min -120 -100 -5 -10 200 Typ Max Unit V V V ìA hFE Classification Marking hFE DL 60 to 120 DM 100 to 200 www.kexin.com.cn 1