2SB1026

2SB1026 Silicon PNP Epitaxial REJ03G0662-0200 (Previous ADE-208-1037) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD1419 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector peak current iC(peak)*1 Collector power dissipation PC*2 Junction temperature Tj Storage temperature Tstg Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Ratings –120 –100 –5 –1 –2 1 150 –55 to +150 Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SB1026 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE1 hFE2 VCE(sat) VBE fT Cob Min –120 –100 –5 — 100 30 — — — — Typ — — — — — — — — 140 20 Max — — — –10 200 — –1 –0.9 — — Unit V V V µA Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –100 V, IE = 0 VCE = –5 V, IC = –150 mA VCE = –5 V, IC = –500 mA (Pulse test) V V MHz pF IC = –500 mA, IB = –50 mA (Pulse test) VCE = –5 V, IC = –150 mA VCE = –5 V, IC = –150 mA VCB = –10 V, IE = 0, f = 1 MHz Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Rev.2.00 Aug 10, 2005 page 2 of 5 2SB1026 Main Characteristics Maximum Collector Dissipation Curve Typical Output Characteristics –1.0 Collector Power Dissipation Pc (W) (on the alumina ceramic board) 1.2 Collector Current IC (A) –0.8 0 –12 0 –10 80 – –60 0.8 –0.6 –0.4 0.4 –40 –30 0 –2 –10 5 – –2 –1 –0.5 mA IB = 0 –0.2 0 50 100 150 0 –2 –4 –6 –8 –10 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 600 Typical Output Characteristics –500 Collector Current IC (mA) –200 –100 –50 –20 –10 VCE = –5 V Pulse DC Current Transfer Ratio hFE 500 400 300 200 100 0 –1 VCE = –5 V Pulse Ta = 75°C Ta = 75°C 25 –25 –5 –2 –1 0 –0.2 –0.4 25 –25 –0.6 –0.8 –1.0 –3 –10 –30 –100 –300 –1,000 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current Saturation Voltage vs. Collector Current Base to Emitter Saturation Voltage VBE (sat) (V) –1.0 –0.8 –0.6 –0.4 –0.2 0 –1 IC = 10 IB Pulse Gain Bandwidth Product fT (MHz) –1.2 –0.6 –0.5 Collector to Emitter Saturation Voltage VCE (sat) (V) VCE = –5 V 300 VBE (sat) T 25 75 25°C a=– –0.4 –0.3 Ta = 75°C 25 –25 200 –0.2 –0.1 VCE (sat) –3 –10 –30 0 –100 –300 –1,000 100 –10 –30 –100 –300 –1,000 Collector Current IC (mA) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 2SB1026 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 200 100 50 f = 1 MHz IE = 0 20 10 5 2 –1 –2 –5 –10 –20 –50 –100 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SB1026 Package Dimensions JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g Unit: mm 4.5 ± 0.1 1.5 1.5 3.0 Ordering Information Part Name 2SB1026DMTL-E Quantity 1000 Shipping Container φ 178 mm Reel, 12 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 0.8 Min 0.44 Max (0.4) 0.53 Max 0.48 Max (2.5) φ1 2.5 ± 0.1 4.25 Max 0.4 1.8 Max 1.5 ± 0.1 0.44 Max (1.5) (0.2) Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: 2-796-3115, Fax: 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: 7955-9390, Fax: 7955-9510 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0